Globalfoundries Singapore Pte. Ltd.

Wensheng Deng

Purakh Raj Verma

Bo Yu

Zeng Wang

Yuzhan Wang

Methods for fabricating integrated circuits are provided. In one example, a method includes depositing an ILD layer overlying a SOI substrate including a device structure and an isolation structure. The device structure is disposed on a semiconductor layer of the SOI substrate and includes a metal silicide region and the isolation structure extends through the semiconductor layer to a buried insulator layer of the SOI substrate. A patterned mask is used for etching through the ILD layer and forming a device contact opening that exposes the metal silicide region and a substrate contact opening that exposes the isolation structure. A device contact is formed in the device contact opening. The isolation structure and the buried insulator layer are etched through to extend the substrate contact opening to a support substrate of the SOI substrate. A substrate contact is formed in the substrate contact opening.

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Singapore, Singapore

Wensheng Deng