Cornell University

Wenshen Li

Debdeep Jena

Kazuki Nomoto

Zongyang Hu

Grace Huili Xing

Huili Grace Xing

A vertical gallium oxide (Ga2O3) device having a substrate, an n-type GaOdrift layer on the substrate, an, n-type semiconducting channel extending from the n-type GaOdrift layer, the channel being one of fin-shaped or nanowire shaped, an n-type source layer disposed on the channel; the source layer has a higher doping concentration than the channel, a first dielectric layer on the n-type Ga2O3 drift layer and on sidewalls of the n-type semiconducting channel, a conductive gate layer deposited on the first dielectric layer and insulated from the n-type source layer, n-type semiconducting channel as well as n-type Ga2O3 drift layer, a second dielectric layer deposited over the conductive gate layer, covering completely the conductive gate layer on channel sidewalls and an ohmic source contact deposited over the n-type source layer and over at least a part of the second dielectric layer; the source contact being configured not to be in electrical contact with the conductive gate layer.

Vertical gallium oxide (GA2O3) power FETs

Described herein are the design and fabrication of Group III trioxides, such as β-GaO, trench-MOS barrier Schottky (TMBS) structures with high voltage (>1 kV), low leakage capabilities, while addressing on the necessary methods to meet the requirements unique to Group III trioxides, such as β-GaO.

Growing community of inventors

Ithaca, NY, United States of America

Wenshen Li