Chinese Academy of Sciences

Wenshan Zhan

Xiufeng Han

Zilong Peng

Yunan Han

Lixian Jiang

Zhongming Zeng

Sufen Zhao

Weining Wang

A magnetic logic element with toroidal magnetic multilayers (). The magnetic logic element comprises a toroidal closed section which is fabricated by etching a unit of magnetic multilayers () deposited on a substrate. Optionally, the magnetic logic element may also comprise a metal core () in the closed toroidal section. Said magnetic multilayers () unit is arranged on the input signal lines A, B, C and an output signal line O, and then is made into a closed toroidal. Subsequently, on the toroidal magnetic multilayered unit (), the input signal lines A', B&#x2032;, C&#x2032; and an output signal line O&#x2032; are fabricated by etching. This magnetic logic element can reduce the demagnetization field and the shape anisotropy effectively, leading to the decrease of the reversal field of magnetic free layer. Furthermore, this magnetic logic element has stable working performance and long operation life of the device.

Magnetic logic element with toroidal multiple magnetic films and a method of logic treatment using the same

The invention discloses a MRAM (Magnetoresistive RAM) based on vertical current writing and its control method, the operation of information writing in the MRAM unit is completed by the corporate effect of the magnetic field generated by the current parallel to the MFC unit and the other current vertical to the MFC unit and passing through this unit. The advantage of such structure is: eliminating a word line (WL) of the prior art especially for information writing, reducing the number of the metal wiring layers and the contact holes, and reducing the complexity of MRAM's structure, and difficulty and cost of manufacturing process.

MRAM based on vertical current writing and its control method

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Beijing, China

Wenshan Zhan