Galaxycore Shanghai Limited Corporation

Huawei Technologies Co., Limited

Konica Minolta, Inc.

Konica Minolta Business Technologies, Inc.

Shanghai Kumhosunny Plastics Co., Ltd.

Shanghai Kumhossunny Plastics Co., Ltd

Wenqiang Li

Jie Li

Lixin Zhao

Qiang Li

Ryuji Kitani

Lei Gao

Minqi Xin

Minghua Luo

Ze Xu

Lin Shu

Yonggang Wang

Chengchen Zhang

Yasuharu Saita

Masashi Mamino

Keita Miyazaki

Methods, systems, and apparatus for rate control are provided. In one aspect, a rate control method includes: receiving, by a control device, a connection establishment request from a terminal, the connection establishment request being for establishing a connection for the terminal to transmit data, and sending, by the control device, rate control time management information to a data sending device. The data sending device is configured to perform rate control over the data sent through the connection based on the time management information. The ratio control time management information includes start time indication information of a rate control time unit used for rate control, and the start time indication information indicates a start time of the rate control time unit.

Rate control method, apparatus, and system

A method for forming a backside illuminated image sensor with a three-dimensional transistor structure is provided, where forming a gate of the three-dimensional transistor structure includes: forming a source follower transistor and/or a reset transistor with a three-dimensional transistor structure, wherein the source follower transistor and/or the reset transistor correspond to a protruding structure; and forming an insulating sidewall around the protruding structure, forming a groove between the insulating sidewall and a channel region of a transistor corresponding to the protruding structure, and forming a gate of the transistor in the groove, wherein the gate of the transistor is isolated by the insulating sidewall.

Backside illuminated image sensor with three-dimensional transistor structure and forming method thereof

A method for producing a thermoplastic resin composition includes melt-blending 50 to 80 parts by mass of a crystalline polyester resin and 20 to 50 parts by mass of an amorphous polyester resin with an extruder, thereby producing a first polyester resin compound. The method further includes melt-blending 90 to 99 parts by mass of the crystalline polyester resin and 1 to 10 parts by mass of a styrene-acrylonitrile-glycidyl methacrylate terpolymer with the extruder or a different extruder, thereby producing a second polyester resin compound. The method further includes compounding 1 to 10 parts by mass of the first polyester resin compound, 1 to 10 parts by mass of the second polyester resin compound, and respective predetermined amounts of a polycarbonate resin, a flame retardant, an antidrip agent, an antioxidant, a lubricant and a toughening agent.

Method for producing thermoplastic resin composition, thermoplastic resin composition and copier/printer exterior part

A backside illumination image sensor and a method for reducing a dark current of the backside illumination image sensor. The backside illumination image sensor comprises: a photodiode, a first conductive type isolated layer (); a gate structure of a pass transistor, corresponding to the first conductive type isolated layer () and formed on an upper surface of a first conductive type semiconductor substrate (), the gate structure () comprising: gate oxide (), a gate layer (), and a gate sidewall (), and the gate structure () correspondingly covering the photodiode; and a floating diffusion zone (), formed in the first conductive type semiconductor substrate () and having second conductive type heavy doping. In the backside illumination image sensor, a defect does not easily appear on a surface, right above the photodiode, of the first conductive type semiconductor substrate (), so that a dark current is effectively prevented from being produced.

Backside illumination image sensor and method for reducing dark current of backside illumination image sensor

An image sensor and a manufacturing method thereof are provided. The image sensor includes: a photo diode; a first-conductive-type isolating layer; a second-conductive-type lightly-doped region formed in the first-conductive-type semiconductor substrate; a first-conductive-type lightly-doped region formed under the second-conductive-type lightly-doped region, where the second-conductive-type lightly-doped region is isolated from the second-conductive-type region by the first-conductive-type lightly-doped region; a gate structure of a transfer transistor; and a floating diffusion region which is second-conductive-type heavily-doped. In the image sensor, the second-conductive-type lightly-doped region is formed to be connected with the floating diffusion region, thus, a distance between the floating diffusion region and the photo diode may be reduced which may enable photo-induced carriers to be transmitted from the photo diode to the floating diffusion region more rapidly, and further increase the transmission efficiency of the photo-induced carriers.

Image sensor and manufacturing method thereof

A copier/printer exterior part uses a halogen-free flame-retardant resin composition. The halogen-free flame-retardant resin composition includes 5 wt % to 50 wt % of unused polycarbonate, 20 wt % to 63 wt % of recycled polycarbonate, 5 wt % to 35 wt % of recycled polyethylene terephthalate, 0.2 wt % to 2 wt % of a styrene-acrylonitrile-glycidyl methacrylate terpolymer, 5 wt % to 15 wt % of a toughener, 10 wt % to 20 wt % of a flame retardant, 0.1 wt % to 0.8 wt % of a flame-retardant antidrip agent, 0.1 wt % to 1 wt % of an antioxidant, and 0.1 wt % to 2 wt % of a lubricant. The styrene-acrylonitrile-glycidyl methacrylate terpolymer includes 1 wt % to 5 wt % of glycidyl methacrylate and 20 wt % to 33 wt % of acrylonitrile.

Copier/printer exterior part using halogen-free flame-retardant resin composition including recycled polycarbonate and recycled polyethylene terephthalate

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Shanghai, China

Wenqiang Li