Boe Technology Group Co., Ltd.

Hefei Xinsheng Optoelectronics Technology Co., Ltd.

Wenlong Xiao

Wei He

Xinjie Zhang

Siquan Wu

A thin film transistor is disclosed, comprising a first, second and third electrode. The first and second electrodes are arranged in a same layer and insulated from each other. The third electrode is arranged below and insulated from the first and second electrodes. The first electrode comprises at least one first conducting part. The second electrode comprises second conducting parts, each of which is arranged adjacent with each first conducting part. The third electrode is provided with an opening part at least partially overlapping with the first or second conducting part. If the first or second conducting part is subject to a channel defect due to short circuit, the first or second conducting part is cut off at an overlapping position with the opening part, to repair the channel defect without affecting the third electrode. A GOA circuit, a display substrate and a display device are further disclosed.

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Beijing, China

Wenlong Xiao