Beihang University

Wenlong Cai

Weisheng Zhao

Boyu Zhang

Jiaqi Wei

Chen Xiao

Xiangyu Zheng

Zhaohao Wang

Kaihua Cao

Rui Xu

Mengxing Wang

Erya Deng

Shaohua Yan

Disclosed are a low-loss coplanar waveguide bonding structure and a manufacturing method thereof, relating to the technical field of semiconductor. The low-loss coplanar waveguide bonding structure includes: a first coplanar waveguide on a first substrate, a second coplanar waveguide on a second substrate and having a same structure as the first coplanar waveguide, and a plurality of two-dimensional heterostructures connecting conductors of the first coplanar waveguide and the second coplanar waveguide in a one-to-one correspondence, where the two-dimensional heterostructures includes: a two-dimensional conductive material layer for signal transmission and a two-dimensional dielectric material layer under the two-dimensional conductive material layer.

Low-loss coplanar waveguide bonding structure and manufacturing method thereof

Disclosed are an ultrafast electric pulse generation and detection device and a use method thereof. The device includes a laser and an electric pulse generator. The electric pulse generator includes: a photoelectric material layer including an optically controlled switching region for responding to excitation light generated by the laser; an insulating layer formed on the photoelectric material layer, wherein a switch structure exists at a position of the insulating layer corresponding to the optically controlled switching region, so that the optically controlled switching region is partially exposed or completely exposed; transmission lines are formed on the insulating layer.

Ultrafast electric pulse generation and detection device and use method thereof

A highly reliable STT-MRAM structure and an implementation method thereof are provided. The STT-MRAM structure includes: a memory block array, including a plurality of memory blocks; on-chip in-situ temperature sensors, for detecting an instantaneous temperature of each memory block; and a controller, which outputs a reading or writing operation signal based on the instantaneous temperature of each memory block detected by the on-chip in-situ temperature sensors, so as to modulate respective voltages and/or frequencies of reading and writing operations of each memory block. When the instantaneous temperature is too high, the voltages and/or frequencies of the reading and writing operations would be decreased, to the contrary when the instantaneous temperature is too low, the voltages and/or frequencies of the reading and writing operations would be increased, which expands a reliable working temperature range and lengthens a lifetime of the STT-MRAM structure.

Highly reliable STT-MRAM structure and implementation method thereof

A magnetic memory includes one or more magnetic tunnel junctions, a heavy metal or anti-ferromagnetic strip film, a first bottom electrode and a second bottom electrode. Every magnetic tunnel junction is located on the strip film and represents a memory cell; the first bottom electrode and the second bottom electrode are respectively connected with two ends of the heavy metal or anti-ferromagnetic strip film; every magnetic tunnel junction includes a first ferromagnetic metal, a first oxide, a second ferromagnetic metal, a first synthetic antiferromagnetic layer and an Xtop electrode from bottom to top in sequence, wherein X is a serial number of the memory cell. A data writing method combines spin orbit torque with spin transfer torque to write data, and respectively applies two currents to the magnetic tunnel junction and the heavy metal or anti-ferromagnetic strip film. Only one current is unable to complete data writing.

Data writing method of magnetic memory

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Beijing, China

Wenlong Cai