Huawei Technologies Co., Limited

Boe Technology Group Co., Ltd.

Southwest Petroleum University

Wenlin Zhang

Ce Ning

Xiaoqin Duan

Hai Bo Zhang

Yingxin Huang

Zhanfeng Cao

Wei Yang

Zhengliang Li

Hehe Hu

Jianming Sun

Peng Zhang

Song Liu

Yajuan Wu

Lixin Sun

Chengzhen Sun

Qi Yao

Bingyu Qu

Feng Zhang

Lei Zhang

Shaobo Zhang

Hao Hu

Xuefei Sun

Luke Ding

Zhiming Li

Guanbao Hui

Jianhua Du

Shuang Sun

Xiaochen Ma

Xiangchun Kong

Yu Wen

Hao Ding

Weijie Wang

Woo-Bong Lee

Zhixing Zhang

Woo Bong Lee

The present disclosure relates to a thin-film transistor, a method for preparing the same, and a display substrate. The method for preparing the thin-film transistor includes the steps of forming a source electrode, a drain electrode, and an active layer, in which the step of forming the source electrode, the drain electrode, and the active layer includes: forming a first thin film from a first metal oxide material in an atmosphere of a first oxygen content; and forming a second thin film from a second metal oxide material in an atmosphere of a second oxygen content, in which the first thin film is configured to form the active layer, the second thin film is configured to form a source electrode and a drain electrode, and the second oxygen content is less than the first oxygen content.

Thin-film transistor and method for preparing the same, display substrate and display device

The present disclosure relates to the field of display technology, and provides a display substrate, its manufacturing method, and a display device. The display substrate includes a display region and a GOA region. An active layer of a TFT at the GOA region at least includes a first oxide semiconductor layer and a second oxide semiconductor layer arranged on the first oxide semiconductor layer, and the first oxide semiconductor layer is arranged between the second oxide semiconductor layer and a base substrate of the display substrate and has a carrier mobility of smaller than the second oxide semiconductor layer.

Display substrate with improved carrier mobility of thin film transistors within GOA region

The present disclosure provides a transistor, an array substrate and a method of manufacturing the array substrate, and a display device. The method of manufacturing the array substrate comprises: depositing a plurality of silicon oxide layers on an active layer of a transistor; and depositing a silicon oxynitride layer over the plurality of silicon oxide layers.

Transistor, array substrate and method of manufacturing the same, display device

An oxide semiconductor composition for use in thin film transistors includes indium oxide, zinc oxide, and an oxide including a doping element of scandium, such as scandium oxide. A molar percentage of the indium oxide can be larger than approximately 50%. The oxide semiconductor composition can have a formula of InScZnO. Manufacturing of the oxide semiconductor composition can include: mixing indium oxide powder, scandium oxide powder, and zinc oxide powder to thereby obtain an oxide shaped object; and sintering the oxide shaped object to form the oxide semiconductor composition. A thin-film transistor for use in a semiconductor device, such as a display apparatus, can include the oxide semiconductor composition, and can thereby have improved mobility of the oxide semiconductor due to the reduced oxygen vacancy therein.

Oxide semiconductor composition, manufacturing method thereof, thin film transistor and display apparatus

Provided are an array substrate and preparation method therefor, and a display apparatus. The array substrate includes: a substrate, the substrate having a first TFT region, a touch control region and a second TFT region; a photosensitive PN junction, the photosensitive PN junction being provided in the touch control region; a first thin-film transistor, provided in the first TFT region, and electrically connected to the photosensitive PN junction; and a second thin-film transistor, provided in the second TFT region, and electrically connected to a pixel electrode.

Array substrate and preparation method therefor, and display apparatus

The present disclosure relates to the field of display, in particular to a thin film transistor, a method for preparing the same, and a display device. The thin film transistor of the present disclosure includes a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode, a drain electrode, and a photoelectric conversion layer in contact with the gate electrode. The photoelectric conversion layer is configured to generate an induced potential in a light environment.

Thin film transistor, method for preparing the same, and display device

An optical detector includes a stacked structure, an active layer, a gate insulating layer, and a gate electrode. The stacked structure includes a first electrode, a photoelectric conversion layer, a second electrode, a first insulating layer, and a third electrode. The active layer is electrically coupled to one of the first electrode or the second electrode, and electrically coupled to the third electrode. The gate insulating layer is arranged on the active layer. The gate electrode is arranged on the gate insulating layer.

Optical detector, fabrication method thereof, fingerprint recognition sensor, and display device

The present application discloses an array substrate comprising an active layer; and a plurality of touch electrodes in a same layer as the active layer.

Array substrate, display device having the same, and manufacturing method thereof

An array substrate, a manufacturing method thereof and a display device are disclosed. The array substrate comprises a plurality of pixel unit regions each including a thin-film transistor (TFTs) and a pixel electrode. A first insulating layer provided with a first through hole and a second through hole is formed between an active layer of the TFT and the pixel electrode. A source electrode of the TFT is connected with the active layer through the first through hole. A drain electrode of the TFT is lapped onto the pixel electrode and connected with the active layer through the second through hole. The array substrate can prevent the oxidization of metal such as copper in the process of patterning a transparent conductive film.

Array substrate, manufacturing method thereof and display device

A thin film transistor and a fabrication method thereof, and a display device are provided. The thin film transistor comprises an active layer, wherein, a target oxide is formed at a portion of the active layer where an oxygen content is higher than oxygen contents of other portions of the active layer, and a carrier mobility of the target oxide is greater than that of other portions of the active layer.

Thin film transistor and fabrication method thereof, and display device

Methods for managing a local Terminal Equipment (TE) accessing a network are provided. In accordance with this disclosure, the MT will not send the key(s) information to the TE until having received a notice of successful authentication from the TE or having decided that the message forwarded by the TE is a response message of successful authentication, which makes the procedure more reasonable and saves the network resources the method further includes a management list containing the identities of local TEs on the basis of the modified procedure.

Method for managing local terminal equipment accessing a network

A touch organic light emitting diode (OLED) display device, including: a thin film transistor formed on one side of a substrate, a touch signal feedback layer formed on the thin film transistor, a luminous substrate provided on the touch signal feedback layer, and a touch signal receiving layer formed on the other side of the substrate. An anode layer of the luminous substrate is connected to a drain electrode of the thin film transistor. As to the touch-sensitive OLED display device, a touch screen and an OLED display portion are prepared integratedly, so that the weight and thickness of the display itself are greatly reduced, and the production cost is saved. A manufacturing method of the touch-sensitive OLED display device is further disclosed.

Touch organic light emitting diode display device and manufacturing method thereof

The present invention relates to the field of display technology, and particularly to a double-sided touch display device which comprises a touch feedback electrode, a first touch receiving electrode and a second touch receiving electrode, wherein the first touch receiving electrode and the second touch receiving electrode are provided at both sides of the touch feedback electrode, respectively. The double-sided touch display device achieve functions of both double-sided touch and transparent display, and has a simple structure and low production cost.

Double-sided touch display device

The present application relates to a user accessing to a visited network in a wireless telecommunication network. After receiving an access request from the user for selecting a visited network and detecting the visited network selected by the user has changed, an AAA server device initiates a request for obtaining authentication and/or authorization information of the user from a HSS. In the process of obtaining the authentication and/or authorization information, the HSS checks whether the user is authorized to access to the visited network according to a list of authorized visited networks stored in the HSS.

Method, system and apparatus for accessing a visited network

A method for processing a service connection between a user terminal and a Wireless Local Area Network (WLAN) is provided. A WLAN interactive network includes at least a WLAN user terminal, a WLAN access unit, a service control unit and a user information storage unit. The method includes setting flags that represent the attached or detached status of the service connection between the user terminal and the WLAN in the WLAN user terminal and the service control unit respectively; and establishing or canceling the connection between the user terminal and the network through the interaction between the WLAN user terminal and the WLAN, meanwhile modifying the corresponding flags.

Growing community of inventors

Guangdong, China

Wenlin Zhang