Shenzhen China Star Optoelectronics Technology Co., Ltd.

Wenlin Mei

Xiaowen Lv

Chihyu Su

Yanhong Meng

The present invention provides an amorphous silicon semiconductor TFT backboard structure, which includes a semiconductor layer () that has a multi-layer structure including a bottom amorphous silicon layer () in contact with a gate insulation layer (), an N-type heavily-doped amorphous silicon layer () in contact with a source electrode () and a drain electrode (), at least two N-type lightly-doped amorphous silicon layers () sandwiched between the bottom amorphous silicon layer () and the N-type heavily-doped amorphous silicon layer (), a first intermediate amorphous silicon layer () separating every two adjacent ones of the lightly-doped amorphous silicon layers (), and a second intermediate amorphous silicon layer () separating the N-type heavily-doped amorphous silicon layer () from the one of the lightly-doped amorphous silicon layers () that is closest to the N-type heavily-doped amorphous silicon layer (). Such a structure further reduces the energy barrier between the drain electrode and the semiconductor layer, making injection of electron easier and ensuring the ON-state current is not lowered down and also helping increase the barrier for transmission of holes, lowering down the leakage current and improving reliability and electrical stability of the TFT.

Amorphous silicon semiconductor TFT backboard structure

The present invention provides a GOA circuit of reducing power consumption. In the GOA unit circuit of the Nth stage, the twenty-second thin film transistor (T) of the pull-up module () is controlled by the twenty-first thin film transistor (T) of the second pull-up controlling and transmission module () to output the constant high voltage level (VDD) to the scan driving signal (G(N)) for reducing the parasitic capacitance of the clock signal, lowering the voltage level of the clock signal, easing the loading of the clock signal, and thus, to reduce the power consumption of the GOA circuit; the clock signal (CK(m)) is outputted to the stage transfer signal (ST(N)) through the twenty-first thin film transistor (T), and the stage transfer signal (ST(N)) is employed for the transmission of the signal and the backward feedback to reduce the loading of the scan driving signal, and enhance the propulsive force of the scan driving signal, and the normal function of the GOA circuit can be ensured; and the forty-first thin film transistor (T) is added in the pull-down holding module () to pull down the stage transfer signal (ST(N)) for preventing the electrical leakage of the twenty-second thin film transistor (T).

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Shenzhen, China

Wenlin Mei