Intel Corporation

Ap Memory Corp, USA

Cascade Semiconductor Corporation

Cypress Semiconductor Corporation

Institute for the Development of Emerging Architectures, L.l.c.

Wenliang Chen

Tse-Yu Yeh

Mircea Poplingher

Lin Ma

Dale Calvin Morris

Martin Spence Denham

Michael Paul Corwin

Rachael Jade Parker

Hans J Mulder

Kaizad Rumy Mistry

Mohsen Alavi

Uddalak Bhattacharya

Carl C Scafidi

Patrick John Ott

Mitchell Alexander Poplingher

Monis Rahman

Roger Y Lo

Wayne W Chen

Paul Gregory Slankard

Ganesh Suryanarayanan

In one embodiment, a device is described for using ferroelectric material in a memory cell. In another embodiment, a method of operating a ferroelectric memory cell is described. Other embodiments are likewise described.

Method of manufacture and/or operation of ferroelectric memory array

In one embodiment, a device is described for using ferroelectric material in a memory cell without a selector device. In another embodiment, a method of operating a ferroelectric memory cell without a selector device is described. Other embodiments are likewise described.

Ferroelectric memory device

Implementations disclosed herein may relate to a memory cell, such as a DRAM memory cell, for example.

Memory cell

A method for bi-directional data synchronization between different clock frequencies is described wherein a state machine counter is provided a first clock signal having a first frequency. The state machine counter is then provided a second clock signal having a second frequency that is an integer multiple of the first clock frequency. The state machine counter has an integer number of states equivalent to the ratio of the second clock signal frequency to the first clock signal frequency. The first clock signal is applied to reset the state machine counter to an initial state. The state machine counter generates an intermediate clock signal whenever the state machine increments through all states to return to the initial state. The intermediate clock is then applied to synchronize data between the first clock frequency and the second clock frequency.

Method for bi-directional data synchronization between different clock frequencies

A fuse-based cell. The fuse-based cell includes a fuse with a programming device electrically coupled to the fuse to program the fuse. A sensing device is electrically coupled to the fuse to sense a programming state of the fuse. A clamping device is electrically coupled to the sensing device to control voltages across the sensing device during programming. A pass device is electrically coupled to the sensing device to control voltages across the sensing device during sensing.

Static, low-voltage fuse-based cell with high-voltage programming

Improved semiconductor integrated circuit random access memory (RAM) features pin-compatible replacement of SRAM devices, while providing low power and high density characteristics of DRAM devices. The refresh operations of a DRAM array are hidden so as to faithfully emulate an SRAM-type interface. The new refresh strategy is based on prohibiting the start of a refresh operation during certain periods but otherwise continuously refreshing the array, rather than affirmatively scheduling refresh at certain times as in the prior art. Short refresh operations are initiated frequently, driven by an internal clock that generates periodic refresh requests, except when a read or write operation is actually accessing the memory array. By isolating the DRAM memory array from I/O structures, external memory accesses are essentially interleaved with refresh operations, rather than temporally segregating them as in prior art.

Asynchronous hidden refresh of semiconductor memory

An improved memory device employs a DRAM array for data storage. In the device, a special row address decoder simultaneously asserts a corresponding unique pair of the wordlines in response to each received valid row address, so that a single valid row address simultaneously accesses two rows of memory cells in the array. The device differentially writes and reads each bit of data across a pair of memory cells; each one of the pair of memory cells being within a different respective row of the array, and the two different rows together corresponding to one of the unique pairs of wordlines asserted by the row address decoder responsive to a valid row address. This arrangement obviates the need for high voltage boosting circuits and thereby reduces power consumption.

Low-power, high-density semiconductor memory device

An SRAM array is disclosed. The SRAM array includes a plurality of SRAM cells. In one embodiment, the SRAM cells are 6-T SRAM cells that further includes a voltage bias device. The voltage bias device raises the voltage level of a low voltage rail V such that the plurality of SRAM cells are connected to a raised low voltage rail.

Low leakage current SRAM array

A loop branch prediction system is provided to predict a final iteration of a loop and resteer an associated fetch module to an appropriate target address. The loop prediction system includes a counter and an end of loop (EOL) module. In one mode, the counter tracks loop branches in process. When a termination condition is detected, the counter switches to a second mode to track the number of loop branches still to be issued. The EOL module compares the number of loop branches still to be issued with one or more threshold values and generates a resteer signal when a match is detected.

Method and apparatus for predicting loop exit branches

A pipelined microprocessor having a branch prediction unit implemented in an instruction pointer generation stage of the microprocessor. The branch prediction unit includes a memory device having at least a first entry configured to hold at least a part of a memory address of a pre-selected branch instruction and at least a part of a memory address of a branch target corresponding to the pre-selected branch instruction. The branch prediction unit compares an instruction pointer of an instruction to be executed with the memory address of the pre-selected branch instruction. In response to a match between the instruction pointer and the memory address of pre-selected branch instruction, the unit causes the microprocessor to fetch an instruction corresponding to the branch target. In one embodiment, the instruction pointer generation stage of the microprocessor is implemented as a first stage of the pipelined microprocessor. In addition, the branch prediction unit is compares the instruction pointer and the memory address of the pre-selected branch instruction during a single clock cycle in which the instruction pointer is generated.

Method and apparatus for performing early branch prediction in a microprocessor

A memory device including an array of memory cells and a method for copying information within the memory device. Each memory cell includes a first memory sub-cell and a second memory sub-cell. Each memory cell also includes a device that copies information from the first memory sub-cell into the second memory sub-cell. Each memory cell may include a static random access memory (SRAM) cell and may utilize tri-state inverters to make overwriting information easier and reduce power consumption. Each memory cell may also include a second copy device that allows information to be copied from the second memory sub-cell to the first memory sub-cell. The memory device may be provided in a register file of a microprocessor to copy information from an architectural branch register (ABR) file to a speculative branch register (SBR) file.

Memory device for a microprocessor register file having a power management scheme and method for copying information between memory sub-cells in a single clock cycle

A method and apparatus for dynamically predicting the outcome and the tar address of a multiple-target branch instruction, where the multiple-target branch instruction contains at least two potential target addresses, not including the fall through address. In addition, this method and apparatus can also be used to predict multiple single-target branches simultaneously. The apparatus stores information indicating the outcome of previous executions and predictions of the multiple-target branch instruction in a branch prediction table. In addition, multiple target addresses (at least two) are associated with the multiple-target branch instruction. Using the information indicating the outcome of the previous execution of the multiple-target branch instruction, the apparatus predicts the outcome of a next execution of the multiple-target branch instruction, and predicts which, if any, of the target addresses associated with the multiple-target branch instruction, will be taken.

Dynamic branch prediction for branch instructions with multiple targets

A branch prediction system is described for use within a microprocessor having an instruction cache capable of storing two or more instructions per cache line. Each entry of a branch prediction table (BPT) includes a value identifying whether at least one other instruction within a common cache line contains a branch. The value is referred to herein as a multiple-B bit value. The multiple-B bit value is examined by branch prediction logic while one branch prediction is being performed to determine whether a second branch prediction can be initiated for another branch within the same cache line. In one implementation, the multiple-B bit of one BPT entry is examined following a hit. A branch prediction for the entry generating a hit is initiated. Simultaneously, the BPT is reaccessed to search for an entry corresponding to another instruction within the same cache line if the multiple-B bit for the first entry was set. If the second entry is found, a secondary branch prediction is initiated. Eventually, the first branch prediction is output. If the first branch prediction is Not Taken, then the second branch prediction is output during the next clock cycle. If the first branch prediction is Taken, then the second branch prediction may be aborted as it is not needed. Method and apparatus embodiments of the invention are described.

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Portland, OR, United States of America

Wenliang Chen