Changxin Memory Technologies, Inc.

Wenli Zhao

Jie Bai

A preparation method of a semiconductor structure includes: a substrate including a groove structure is provided; a first isolation layer, a second isolation layer and a third isolation layer are sequentially formed on a bottom and sidewalls of the groove structure, where an upper surface of the first isolation layer is lower than an upper surface of the second isolation layer and an upper surface of the substrate to form a side trench; the third isolation layer is etched to enable an upper surface of the third isolation layer to be lower than the upper surface of the second isolation layer so that a top of the second isolation layer protrudes with respect to the first isolation layer and the third isolation layer to form a convex structure; and the second isolation layer is etched to remove the convex structure.

Semiconductor structure and preparation method of semiconductor structure

The present disclosure relates to the technical field of semiconductors, and provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a substrate, an NMOS transistor, and a PMOS transistor. The NMOS transistor includes a first dielectric layer, a first work function layer, and a first conductive layer that are stacked in sequence. The PMOS transistor includes a second dielectric layer, a second work function layer, and a second conductive layer that are stacked in sequence.

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Hefei, China

Wenli Zhao