Solarlab Aiko Europe Gmbh

Wenli Xu

Yongqian Wang

Xinqiang Yang

Kaifu Qiu

Gang Chen

Ning Zhang

Gang Wang

Jianbo Hong

Jianjun Zhang

Wei Zhu

The disclosure discloses a method for manufacturing a solar cell, a solar module, and a power generation system. The manufacturing method includes the following steps: S: perforating film layer in a first region and/or a second region of a solar cell where an electrode is to be disposed, thus forming a plurality holes; S: growing a plurality seed layers on the solar cell, contacting with the first region and/or the second region through the plurality of holes or grooves in S; and S: horizontally transporting a to-be-electroplated solar cell on a horizontal electroplating device, to form a cathode on the seed layer, where an anode terminal is disposed in an electroplating liquid in an electroplating bath, and a moving mechanism disposed in the electroplating bath drives the solar cell to move from inlet to outlet, thus achieving electroplating.

Method for manufacturing solar cell, solar module, and power generation system

The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.

Doped region structure and solar cell comprising the same, cell assembly, and photovoltaic system

The disclosure provides a solar cell and a back contact structure thereof, a photovoltaic module, and a photovoltaic system. The back contact structure includes a first doped region having an opposite polarity to a silicon substrate and a second doped region having a same polarity as the silicon substrate. An isolation region is arranged between the first doped region and the second doped region. The protective region arranged on the first doped region includes an insulation layer and a third doped layer having a same polarity as the second doped region. An opening is provided in the protective region to connect the first conductive layer to the first doped region. In the present invention, scratches caused by belt transmission in an existing cell fabrication process is resolved.

Passivated contact structure and solar cell comprising the same, cell assembly, and photovoltaic system

A method for soldering a solar cell, includes: placing a plurality of back contact cells on a soldering platform, where back surfaces of the back contact cells face away from the soldering platform, and electrodes corresponding to two adjacent back contact cells have opposite polarities in a connection direction of a plurality of to-be-connected ribbons; placing the plurality of to-be-connected ribbons on the electrodes of the plurality of back contact cells by using a first clamping portion, a second clamping portion, and a plurality of third clamping portions, where the first clamping portion, the second clamping portion, and the plurality of third clamping portions respectively correspond to head ends, tail ends, and middle portions of the plurality of ribbons; and heating the plurality of ribbons by using a heater to connect the plurality of ribbons to the plurality of back contact cells.

Method for soldering solar cell, cell string, photovoltaic module, and soldering device

A conductive contact structure of a solar cell is provided, includes a substrate; a semiconductor region; and an electrode. The semiconductor region is disposed on or in the substrate. The electrode is disposed in the semiconductor region. The electrode includes a seed layer in contact with the semiconductor region. The seed layer includes an alloy material, and includes a main component and an improved component. The main component is one or more metals having an average refractive index lower than 2 and a wavelength in a range of 850-1200 nm, and the improved component includes any one or more of Mo, Ni, Ti, W, Cr, Mn, Pd, Bi, Nb, Ta, Pa, Si, and V.

Conductive contact structure of solar cell, solar module, and power generation system

The disclosure provides a passivated contact structure and a solar cell including the same, a cell assembly and a photovoltaic system. The passivated contact structure includes a first passivated contact region on a silicon substrate and a second passivated contact region on the first passivated contact region. The second passivated contact region has an opening connecting a conductive layer to the first passivated contact region. The first passivated contact region includes a first doped layer, a first passivation layer and a second doped layer. The second passivated contact region includes a second passivation layer and a third doped layer. The first passivation layer is a porous structure inlaid with the first doped layer and/or the second doped layer in a hole region. Utilizing the passivated contact structure provided in this invention, mitigates the serious recombination caused by metal directly contacting with silicon substrate.

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Yiwu, China

Wenli Xu