Slt Technologies, Inc.

Soraa, Inc.

Wenkan Jiang

Dirk Ehrentraut

Mark Philip D'Evelyn

Derrick S Kamber

Bradley C Downey

Michael Ragan Krames

Mark P D'evelyn

Drew W Cardwell

Jonathan D Cook

Rajeev Tirumala Pakalapati

James Wenger

A gallium-containing nitride crystals are disclosed, comprising: a top surface having a crystallographic orientation within about 5 degrees of a plane selected from a (0001) +c-plane and a (000-1) −c-plane; a substantially wurtzite structure; n-type electronic properties; an impurity concentration of hydrogen greater than about 5×10cm; an impurity concentration of oxygen between about 2×10cmand about 1×10cm; an [H]/[O] ratio of at least 0.3; an impurity concentration of at least one of Li, Na, K, Rb, Cs, Ca, F, and Cl greater than about 1×10cm; a compensation ratio between about 1.0 and about 4.0; an absorbance per unit thickness of at least 0.01 cmat wavenumbers of approximately 3175 cm, 3164 cm, and 3150 cm; and wherein, at wavenumbers between about 3200 cmand about 3400 cmand between about 3075 cmand about 3125 cm, said gallium-containing nitride crystal is essentially free of infrared absorption peaks having an absorbance per unit thickness greater than 10% of the absorbance per unit thickness at 3175 cm.

Oxygen-doped group III metal nitride and method of manufacture

A gallium-containing nitride crystals are disclosed, comprising: a top surface having a crystallographic orientation within about 5 degrees of a plane selected from a (0001)+c-plane and a (000-1)−c-plane; a substantially wurtzite structure; n-type electronic properties; an impurity concentration of hydrogen greater than about 5×10cm, an impurity concentration of oxygen between about 2×10cmand about 1×10cm, an [H]/[O] ratio of at least 0.3; an impurity concentration of at least one of Li, Na, K, Rb, Cs, Ca, F, and Cl greater than about 1×10cm, a compensation ratio between about 1.0 and about 4.0; an absorbance per unit thickness of at least 0.01 cmat wavenumbers of approximately 3175 cm, 3164 cm, and 3150 cm, and wherein, at wavenumbers between about 3200 cmand about 3400 cmand between about 3075 cmand about 3125 cm, said gallium-containing nitride crystal is essentially free of infrared absorption peaks having an absorbance per unit thickness greater than 10% of the absorbance per unit thickness at 3175 cm.

Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

Large area group III nitride crystals and substrates, methods of making, and methods of use

Group III nitride substrate, method of making, and method of use

Gallium-containing nitride crystals are disclosed, comprising: a top surface having a crystallographic orientation within about 5 degrees of a plane selected from a (0001) +c-plane and a (000-1) &#x2212;c-plane; a substantially wurtzite structure; n-type electronic properties; an impurity concentration of hydrogen greater than about 5&#xd7;10cm; an impurity concentration of oxygen between about 2&#xd7;10cmand about 1&#xd7;10cm; an [H]/[O] ratio of at least 0.3; an impurity concentration of at least one of Li, Na, K, Rb, Cs, Ca, F, and CI greater than about 1&#xd7;10cm; a compensation ratio between about 1.0 and about 4.0; an absorbance per unit thickness of at least 0.01 cmat wavenumbers of approximately 3175 cm, 3164 cm, and 3150 cm; and wherein, at wavenumbers between about 3200 cmand about 3400 cmand between about 3075 cmand about 3125 cm, said gallium-containing nitride crystal is essentially free of infrared absorption peaks having an absorbance per unit thickness greater than 10% of the absorbance per unit thickness at 3175 cm.

An ultralow defect gallium-containing nitride crystal and methods of making ultralow defect gallium-containing nitride crystals are disclosed. The crystals are useful as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and photoelectrochemical water splitting for hydrogen generators.

Large area, low-defect gallium-containing nitride crystals, method of making, and method of use

Large area seed crystals for ammonothermal GaN growth are fabricated by deposition or layer transfer of a GaN layer on a CTE-matched handle substrate. The sides and back of the handle substrate are protected from the ammonothermal growth environment by a coating comprising an adhesion layer, a diffusion barrier layer, and an inert layer. A patterned mask, also comprising an adhesion layer, a diffusion barrier layer, and an inert layer, may be provided over the GaN layer to allow for reduction of the dislocation density by lateral epitaxial growth.

Large area seed crystal for ammonothermal crystal growth and method of making

High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.

High quality group-III metal nitride crystals, methods of making, and methods of use

Large-area, low-cost single crystal transparent gallium-containing nitride crystals useful as substrates for fabricating GaN devices for electronic and/or optoelectronic applications are disclosed. The gallium-containing nitride crystals are formed by controlling impurity concentrations during ammonothermal growth and processing to control the relative concentrations of point defect species.

Transparent group III metal nitride and method of manufacture

Methods for quantifying extended defects in a gallium-containing nitride crystal, wafer, or device, are disclosed. The methods include providing a gallium-containing nitride crystal, wafer, or device, processing the gallium-containing nitride crystal, wafer, or device in an etchant solution comprising one or more of HPO, HPOthat has been conditioned by prolonged heat treatment to form polyphosphoric acid, and HSO; removing the gallium-containing nitride crystal, wafer, or device from the etchant solution; and quantifying the concentration of at least one of etch pits or etch grooves.

Growing community of inventors

Corona, CA, United States of America

Wenkan Jiang