Gtat Corporation

Oci Company Ltd.

Other

Wenjun Qin

Aaron Dean Rhodes

Jeffrey C Gum

Chad Fero

Bruce Hazeltine

Scott Fahrenbruck

A method is provided for stabilizing filaments in a chemical vapor deposition (CVD) reactor. The method includes providing the pair of filaments, and connecting the pair of filaments with at least one stabilizer. The stabilizer may include an electronically insulating material.

Method for stabilizing filaments in a chemical vapor deposition reactor

The present invention provides chucks having a well that supports rods produced during chemical vapor deposition. The chucks can utilize slats and windows around the well up to which the rod can grow and become supported.

Chuck for chemical vapor deposition systems and related methods therefor

In various embodiments, systems, methods, and apparatus are provided for stabilizing filaments in a chemical vapor deposition (CVD) reactor system. A system includes a base plate having a plurality of electrical connections, a pair of filaments extending from the base plate, and a stabilizer connecting the pair of filaments. Each filament is in electrical contact with, and defines a conductive path between, the two electrical connections. A method of stabilizing the filaments includes providing the pair of filaments, and connecting the pair of filaments with at least one stabilizer. The stabilizer may include an electrically insulating material.

Methods and systems for stabilizing filaments in a chemical vapor deposition reactor

Systems and methods for removing boron-containing contaminants from a composition comprising trichlorosilane to form a purified product comprising trichlorosilane are disclosed. Purification columns and devices, having various locations of inlet and outlet ports, are fluidly connected to each other in order to remove various types of boron species and other impurities present in TCS.

Purification of trichlorosilane

Systems and methods for the production of polysilicon or another material via chemical vapor deposition in a reactor are provided in which gas is distributed using a silicon standpipe. The silicon standpipe can be attached to the reactor system using a nozzle coupler such that precursor gases may be injected to various portions of the reaction chamber. As a result, gas flow can be improved throughout the reactor chamber, which can increase the yield of polysilicon, improve the quality of polysilicon, and reduce the consumption of energy.

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Missoula, MT, United States of America

Wenjun Qin