International Business Machines Corporation

Globalfoundries Inc.

Wenjuan Zhu

Gustavo Alejandro Stolovitzky

Hongbo Peng

Huilong Zhu

Yanqing Wu

Ravikumar Ramachandran

Jin Cai

Deborah A Neumayer

Phaedon Avouris

Mahender Kumar

Effendi Leobandung

Oleg Gluschenkov

Josephine B Chang

Alfred Grill

Zhijiong Luo

Fei Liu

Michael Patrick Chudzik

Wilfried Haensch

Dirk Pfeiffer

Damon B Farmer

Christos Dimitrios Dimitrakopoulos

Dae-Gyu Park

Yu-Ming Lin

Dan Mihai Mocuta

Akihisa Sekiguchi

Zihong Liu

Christine Norris

A technique for a nanodevice is provided. A reservoir is separated into two parts by a membrane. A nanopore is formed through the membrane, and the nanopore connects the two parts of the reservoir. The nanopore and the two parts of the reservoir are filled with ionic buffer. The membrane includes a graphene layer and insulating layers. The graphene layer is wired to first and second metal pads to form a graphene transistor in which transistor current flowing through the graphene transistor is modulated by charges or dipoles passing through the nanopore.

Graphene transistor gated by charges through a nanopore for bio-molecular sensing and DNA sequencing

A technique for a nanodevice is provided. A reservoir is separated into two parts by a membrane. A nanopore is formed through the membrane, and the nanopore connects the two parts of the reservoir. The nanopore and the two parts of the reservoir are filled with ionic buffer. The membrane includes a graphene layer and insulating layers. The graphene layer is wired to first and second metal pads to form a graphene transistor in which transistor current flowing through the graphene transistor is modulated by charges passing through the nanopore.

A technique is provided for performing sequencing with a nanodevice. Alternating graphene layers and dielectric layers are provided one on top of another to form a multilayer stack of heterojunctions. The dielectric layers include boron nitride, molybdenum disulfide, and/or hafnium disulfide layers. A nanopore is formed through the graphene layers and the dielectric layers. The graphene layers are individually addressed by applying individual voltages to each of the graphene layers on a one to one basis when a particular base of a molecule is in the nanopore. Each of the graphene layers is an electrode. Individual electrical currents are measured for each of the graphene layers as the particular base moves from a first graphene layer through a last graphene layer in the nanopore. The base is identified according to the individual electrical currents repeatedly measured for the base moving from the first through last graphene layer in the nanopore.

Heterojunction nanopore for sequencing

Semiconductor nano pressure sensor devices having graphene membrane suspended over cavities formed in a semiconductor substrate. A suspended graphene membrane serves as an active electro-mechanical membrane for sensing pressure, which can be made very thin, from about one atomic layer to about 10 atomic layers in thickness, to improve the sensitivity and reliability of a semiconductor pressure sensor device.

Graphene pressure sensors

Semiconductor nano pressure sensor devices having graphene membrane suspended over open cavities formed in a semiconductor substrate. A suspended graphene membrane serves as an active electro-mechanical membrane for sensing pressure, which can be made very thin, from about one atomic layer to about 10 atomic layers in thickness, to improve the sensitivity and reliability of a semiconductor pressure sensor device.

A three-dimensional integrated circuit includes a semiconductor device, an insulator formed on the semiconductor device, an interconnect formed in the insulator, and a graphene device formed on the insulator.

Graphene devices and semiconductor field effect  transistors in 3D hybrid integrated circuits

A method of forming a semiconductor device includes forming a field-effect transistor (FET), and forming a fuse which includes a graphene layer and is electrically connected to the FET.

Graphene-based eFuse device

Embodiments relate to a method for representing data in a graphene-based memory device. The method includes applying a first voltage to a back gate of a graphene-based memory device and a second voltage to a first graphene layer of the graphene-based memory device. The graphene-based memory device includes the first graphene layer and a second graphene layer and a first insulation layer located between the first and second graphene layers. The first insulation layer has an opening between the first and second graphene layers. The back gate is located on an opposite side of the second graphene layer from the first insulation layer. The first graphene layer is configured to bend into the opening of the first insulation layer to contact the second graphene layer based on a first electrostatic force generated by the applying the first voltage to the back gate.

Graphene-based non-volatile memory

A silicon nitride layer is provided on an uppermost surface of a graphene layer and then a hafnium dioxide layer is provided on an uppermost surface of the silicon nitride layer. The silicon nitride layer acts as a wetting agent for the hafnium dioxide layer and thus prevents the formation of discontinuous columns of hafnium dioxide atop the graphene layer. The silicon nitride layer and the hafnium dioxide layer, which collectively form a low EOT bilayer gate dielectric, exhibit continuous morphology atop the graphene layer.

Bilayer gate dielectric with low equivalent oxide thickness for graphene devices

A semiconductor device includes a field-effect transistor (FET), and a fuse which includes a graphene layer and is electrically connected to the FET.

Graphene-based efuse device

Semiconductor nano-devices, such as nano-probe and nano-knife devices, which are constructed using graphene films that are suspended between open cavities of a semiconductor structure. The suspended graphene films serve as electro-mechanical membranes that can be made very thin, from one or few atoms in thickness, to greatly improve the sensitivity and reliability of semiconductor nano-probe and nano-knife devices.

Growing community of inventors

Fishkill, NY, United States of America

Wenjuan Zhu