The South China University of Technology

Wenjin Mai

Guoqiang Li

Wenliang Wang

Deqi Kong

Baiyu Su

Zhengliang Lin

An InGaN/GaN multiple quantum well blue light detector- includes: a Si substrate, an AlN/AlGaN/GaN buffer layer, a u-GaN/AlN/u-GaN/SiN/u-GaN buffer layer, an n-GaN buffer layer, an InGaN/GaN superlattice layer and an InGaN/GaN multiple quantum well layer in sequence from bottom to top. The multiple quantum well layer has a groove and a mesa, the mesa and the groove of the multiple quantum well layer are provided with a SiNpassivation layer. The passivation layer in the groove is provided with a first metal layer electrode with a semicircular cross section, and the passivation layer on the mesa is provided with second metal layer electrode.

InGaN/GaN multiple quantum well blue light detector combined with embedded electrode and passivation layer structure and preparation method and application thereof

Growing community of inventors

Guangzhou, China

Wenjin Mai