Boe Technology Group Co., Ltd.

Beijing Boe Technology Development Co., Ltd.

Wenhai Mei

Zhenqi Zhang

Yichi Zhang

Zhuo Chen

Aidi Zhang

Xiaoyuan Zhang

Zhihong Wu

Haowei Wang

Yuanming Zhang

Dong Li

Tuo Sun

Yanzhao Li

Boris Kristal

Zhuo Hua Li

Changcheng Ju

The present disclosure provides a light emitting device and a method for preparing the same, a display panel and a display device. The light emitting device includes: a base substrate; a first electrode, a light emitting layer and a second electrode stacked on the base substrate in sequence; the light emitting layer includes a polymer alignment layer and a quantum dot layer arranged adjacently, the polymer alignment layer having main chains, at least parts of which have a same length direction in the polymer alignment layer, and a ligand group connected to quantum dots in the quantum dot layer through a coordination bond.

Light emitting device and method for preparing the same, display panel and display device

A method of patterning quantum dot layer includes: forming, on a substrate, a film layer including a photosensitive material and quantum dots with ligands on surfaces of the quantum dots; irradiating a quantum dot reserved area with light of a preset wavelength; where under irradiation with light of the preset wavelength, the photosensitive material or a product of the photosensitive material after light irradiation reacts with the ligands on the surfaces of the quantum dots, to allow the ligands to fall off from the surfaces of the quantum dots, so that solubility of the quantum dots is changed to cause the quantum dots to undergo coagulation; and removing a portion of the film layer which is not irradiated by the light of the preset wavelength, to form a patterned quantum dot portion of the quantum dot layer in the quantum dot reserved area.

Method for patterning quantum dot layer, method for manufacturing light emitting device

The present disclosure provides a quantum dot light emitting diode, including: a first electrode, a second electrode, a quantum dot light emitting layer between the first electrode and the second electrode, an electron transport layer between the quantum dot light emitting layer and the first electrode, and an electron buffer layer between the electron transport layer and the quantum dot light emitting layer; wherein the electron transport layer and the electron buffer layer include a same metal oxide, and an oxygen vacancy concentration in the electron buffer layer is greater than that in the electron transport layer. The embodiment of the present disclosure also provides a manufacturing method for the quantum dot light emitting diode and a display apparatus.

Quantum dot light emitting diode, manufacturing method thereof and display apparatus

The present disclosure provides a light-emitting device, comprising: a first carrier transport layer disposed on a substrate; and a light-emitting layer disposed on a side of the first carrier transport layer away from the substrate; wherein the first carrier transport layer comprises a first transport sublayer comprising nanoparticles and an inorganic ligand connected to the surface of the nanoparticles, wherein the inorganic ligand comprises a halogen group element or an oxygen group element.

Light-emitting device and preparation method thereof, display substrate and display device

A luminescent device, a manufacturing method thereof, and a display apparatus, the luminescent device may avoid a fluorescence quenching problem of the quantum dot light-emitting layer due to the influence of the electron transport layer. The luminescent device includes: an anode, a quantum dot light-emitting layer, an electron transport layer, and a cathode in a stacked arrangement; the electron transport layer includes inorganic oxide nanoparticles and a porous frame structure, and the inorganic oxide nanoparticles are anchored in pores of the porous frame structure; the porous frame structure is configured to be formed by ligand reaction; a general structural formula of the ligand includes: A-X-Q; A is a coordinating group, and is configured to coordinate with the inorganic oxide nanoparticles, X is a regulator group, and is configured to increase or decrease an electron mobility, and Q is a frame group, and is configured to form a frame structure.

Luminescent device, manufacturing method thereof, and display apparatus

A quantum dot light-emitting structure, a manufacturing method thereof and a display apparatus. The manufacturing method includes: providing quantum dot solution, the quantum dot solution including a first quantum dot which surface is modified with a first ligand and a photo-ligand remover, and the first ligand being dissolved in a rinsing solvent; coating the quantum dot solution on a base substrate to form a first quantum dot light-emitting material layer; partially exposing the first quantum dot light-emitting material layer, so that the first quantum dot light-emitting material layer includes an exposed portion and an unexposed portion, the photo-ligand remover being configured to release a ligand remover under irradiation, to remove the first ligand in the exposed portion of the first quantum dot light-emitting material layer; and developing and rinsing the exposed first quantum dot light-emitting material layer by using the rinsing solvent, to form the first quantum dot light-emitting layer.

Quantum dot light-emitting structure and manufacturing method thereof, and display apparatus

Disclosed are a light emitting panel, a display apparatus, and a method for manufacturing the light emitting panel. The light emitting panel includes: a substrate, at least two electrode layers arranged on one side of the substrate, a light emitting layer between the electrode layers. An interfacial modification layer is arranged on one side of at least one of the electrode layers facing the light emitting layer. The interfacial modification layer includes: a polycyclic structure, a first electriferous group connected to a side of the polycyclic structure away from the light emitting layer, a second electriferous group connected to a side of the polycyclic structure facing the light emitting layer. Charges of the first and second electriferous group are different, so that the interfacial modification layer has a dipole moment, therefore a work function of the electrode layers in contact with the interfacial modification layer is adjusted.

Light emitting panel, display apparatus, and manufacturing method of light emitting panel

The present application can provide a nanoparticle, a method for patterning a nanoparticle layer and a light emitting device. When the nanoparticle provided by the present application is adopted for manufacturing a light emitting layer of the light emitting device, a cross-linking reaction occurs among first ligands of adjacent nanoparticles under irradiation of ultraviolet light, and the cross-linked nanoparticles may be firmly connected to a front film layer of the light emitting layer, so that when a developing solution is adopted for developing treatment, the cross-linked nanoparticles are not insoluble in the developing solution and are retained while non-cross-linked nanoparticles are dissolved in the developing solution and are separated from the front film layer to be removed, therefore completing patterning of the nanoparticle layer.

Nanoparticle and method for cross-linking of adjacent nanoparticles among ligands of adjacent nanoparticles by delocalizing electrons to a surface of the nanoparticles to contact the ligand

A light emitting thin film and a manufacturing method thereof, a light emitting device and a displaying substrate, which relates to the technical field of displaying. The light emitting thin film includes a polymer () and a quantum dot () bonded to the polymer (); the quantum dot () includes a metal nanoparticle () and a core-shell structure connected to the metal nanoparticle (); and the metal nanoparticle () is bonded to the polymer () by a sulfide bond.

Light-emitting thin film, preparation method therefor, light-emitting device and display substrate

A quantum dot light-emitting device, a manufacturing method and a display device are provided. The quantum dot light-emitting device includes a cathode and an electron transport layer arranged on one side of the cathode, wherein the electron transport layer comprises a plurality of pixel regions; an adhesive layer arranged on one side of the electron transport layer, away from the cathode; a quantum dot film layer arranged on one side of the adhesive layer, away from the electron transport layer, wherein both the quantum dot film layer and the adhesive layer are located in the pixel regions; wherein the adhesive layer is respectively connected to the electron transport layer and the quantum dot film layer through at least one of chemical bonding and physical entanglement.

Quantum dot light-emitting device, manufacturing method and display device

A display substrate, a display panel and a method for manufacturing the display substrate are provided. The display substrate comprises a backing substrate and a plurality of pixel areas formed on the backing substrate, wherein the display substrate further comprises a quantum dot layer, the quantum dot layer comprises a plurality of quantum dot units located in the plurality of pixel areas respectively, wherein the quantum dot units comprise a matrix layer and quantum dots dispersed in the matrix layer, the matrix layer comprises a central region and a peripheral region disposed around the central region, the peripheral region comprises a polymer of photocurable monomers, and the central region comprises unpolymerized photocurable monomers.

Display substrate, method for manufacturing the same, and display panel

Provided are a display substrate, a preparation method thereof, and a display apparatus. A portion of a pixel definition layer that is in contact with a light-emitting functional layer is configured to have the performance of switching between hydrophilicity and hydrophobicity when an external condition changes. When film layers of the light-emitting functional layer are formed, due to the inconsistent hydrophilicity or hydrophobicity of the film layers of the light-emitting functional layer, when a hydrophilic light-emitting functional layer is formed, the pixel definition layer switches, under processing via the external condition, the portion of the pixel definition layer that is in contact with the light-emitting functional layer to be hydrophobic, and when a hydrophobic light-emitting functional layer is formed, the pixel definition layer switches, under processing via the external condition, the portion of the pixel definition layer that is in contact with the light-emitting functional layer to be hydrophilic.

Display substrate and preparation method therefor, and display apparatus

Embodiments of the present disclosure provide a quantum dot light emitting device, a preparation method thereof and a quantum dot display panel, the method includes: forming a first function layer; forming a first sacrificial layer and a first photoresist layer; patterning the first photoresist layer; patterning the first sacrificial layer, the first function layer includes a first part and a second part, and the first sacrificial layer pattern and the first photoresist pattern are stacked on the first part, the second part is exposed by the first sacrificial layer pattern and the first photoresist pattern; forming a first quantum dot material layer; stripping the first sacrificial layer pattern to remove the first sacrificial layer pattern, the first photoresist pattern and the first quantum dot material layer on the first sacrificial layer pattern, retaining the first quantum dot material layer on the second part of the first function layer.

Preparation methods of quantum dot light emitting device and quantum dot display panel using stacked sacrificial layer and photoresist layer

A light-emitting structure, a display panel and a display device. The light-emitting structure comprises a first light-emitting element. The first light-emitting element comprises a first light-emitting layer, a first electron transport layer and a first cathode. The first cathode is in contact with the first electron transport layer. The energy level of conduction band minimum (CBM) of the first electron transport layer is greater than the Fermi level of the first cathode. A difference between the energy level of CBM of the first electron transport layer and the Fermi level of the first cathode is in a range from 0.3 to 0.6 eV.

Light-emitting structure, display panel and display device

The present disclosure provides a quantum dot film, a quantum dot device, and a display panel. The provided quantum dot film comprises a plurality of quantum dots and a plurality of polymer molecular chains. The polymer molecule chain comprises at least one first segment and at least one second segment, wherein the first segment has a tensile modulus greater than that of the second segment, and the second segment has a flexural modulus less than that of the first segment.

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Beijing, China

Wenhai Mei