Rodel Holdings, Inc.

Wendy B Goldberg

Terence M Thomas

Joseph K So

Craig D Lack

Qianqiu Ye

Wade Godfrey

Glenn C Mandigo

Ross E Barker, Ii

Ian G Sullivan

A method of polishing a wafer in a carrier by a polishing pad, controlling a ratio of platen speed to carrier speed (PS to CS) within a specific range, or controlling a first polishing step with a PS to CS ratio in the range of about 150:1 to about 1:150 followed by a second polishing step with a platen speed of about 0 to 20 rpm while maintaining the carrier speed used in the first polishing step, which maximizes clearing of residual material removed from a patterned wafer surface by polishing.

Chemical mechanical planarization of metal substrates

A polishing composition for polishing a semiconductor wafer includes a source of chloride ions in solution, which reduces surface roughness of copper interconnects that are recessed in the wafer. High points on the copper interconnects are polished during a polishing operation, while the chloride ions migrate to electric fields concentrated at the high points. The chloride ions at the high points deter replating of copper ions from solution onto the high points. Instead the copper ions replate elsewhere on the interconnects, which reduces the surface roughness of the interconnects.

Method and composition for polishing by CMP

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Wilmington, DE, United States of America

Wendy B Goldberg