Lam Research Corporation

Wenchi Liu

Zhongkui Tan

Qing Xu

Yoshie Kimura

Yoko Yamaguchi

Hua Xiang

Yasushi Ishikawa

Juan Valdivia, Iii

Colin Richard Rementer

A method for patterning a stack having a mask with a plurality of mask features is provided. A targeted deposition is provided, wherein the targeted deposition comprises a plurality of cycles, wherein each cycle comprises flowing a precursor to deposit a layer of precursor and targeted curing the layer of precursor, comprising flowing a curing gas, flowing a modification gas, forming a plasma from the curing gas and modification gas, and exposing the layer of precursor to the plasma providing a targeted curing, wherein plasma from the curing gas cures first portions of the layer of precursor and plasma from the modification gas modifies second portions of the layer of precursor, wherein the modification of the second portion reduces curing of the layer of precursor of the second portions of the layer of precursor. The stack is etched through the targeted deposition.

Method for etching features using a targeted deposition for selective passivation

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Milpitas, CA, United States of America

Wenchi Liu