Western Digital (fremont), Inc.

Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Wencheng Su

Franky So

Hai Sun

Wei Gao

Zhigang Zhou

Ming Jiang

Wei Zhang

Ching-Huang Lu

Ming Mao

Tao Pan

Hong Zhang

Ge Yi

Lien-Chang Wang

Benjamin Krummacher

Dujiang Wan

Guanghong Luo

Homer Antoniadis

Guanxiong Li

Donghong Li

Lingyun Miao

Anup Roy

Zhihong Zhang

Xiaotian Zhou

Xiaoyu Yang

Jane Ang

Lieping Zhong

Yunjun Tang

Miao Wang

Tiffany Yun Wen Jiang

Hongzhou Jiang

James Yuan

Benjamin Claus Krummacher

Disclosed are methods for making ultra-narrow track width (TW) read sensors, and read transducers incorporating such sensors. The methods utilize side-wall line patterning techniques to prepare ultra-narrow mill masks that can be used to prepare the ultra-narrow read sensors.

Method for making ultra-narrow read sensor and read transducer device resulting therefrom

A method fabricates a magnetic transducer. A sacrificial leading shield is provided on an etch stop layer. A nonmagnetic layer is provided on the sacrificial leading shield. A pole trench is formed in the nonmagnetic layer and on the sacrificial leading shield. A pole is formed. The pole has a bottom and a top wider than the bottom in a pole tip region. Part of the pole in the pole tip region is in the pole trench and at the ABS location. The sacrificial leading shield and part of the nonmagnetic layer adjacent to the pole are removed. An air bridge thus resides in place of the sacrificial leading shield between the portion of the pole and the etch stop layer. As least one shield layer is provided. The at least one shield layer substantially fills the air bridge and form a monolithic shield including a leading and side shields.

Method for providing a monolithic shield for a magnetic recording transducer

A method for fabricating a transducer on a substrate is described. The transducer includes an antiferromagnetic seed structure. The antiferromagnetic seed structure includes a first NiFe layer, a first multilayer including a first Ru layer, a second NiFe layer, and a second multilayer including a second Ru layer. The second multilayer, the second NiFe layer and part of the first Ru layer are removed using a first wet etch, which uses a first etchant combination to remove NiFe and in which Ru is insoluble. The second Ru layer is removed through lift-off due to etching of the second NiFe layer. A remainder of the first Ru layer is removed through a second wet etch, which uses a second etchant combination to remove Ru. A remaining portion of the first multilayer and the first NiFe layer are removed through a third etch, which uses a third etchant combination that removes NiFe.

Method and system for removing an antiferromagnetic seed structure

A method and system for fabricating a microelectric device are described. A write pole of an energy assisted magnetic recording head or a capacitor might be fabricated. The method includes depositing a resist film and curing the resist film at a temperature of at least 180 degrees centigrade. A cured resist film capable of supporting a line having an aspect ratio of at least ten is thus provided. A portion of the cured resist film is removed. A remaining portion of the resist film forms the line. An insulating or nonmagnetic layer is deposited after formation of the line. The line is removed to provide a trench in the insulating or nonmagnetic layer. The trench has a height and a width. The height divided by the width corresponds to the aspect ratio. At least part of the structure is provided in the trench.

Method for fabricating a structure for a microelectric device

An apparatus such as a light source is disclosed which has an OLED device and an index bridging elastomer disposed on the substrate or transparent electrode of said OLED device and on the exterior of said OLED device. The elastomer bridges the refractive index between the substrate and an intended target for said apparatus.

Efficiency enhancement methods for OLED light source through index bridging

An electroluminescent device utilizes a plurality of embodiments to minimize the variation in luminance due to changes in the voltage across the device. These include a highly conductive hole injection layer in a bi-layer device, a thick hoe transporting interlayer in a tri-layer device and the addition of an external resistor in series with the device.

Luminance uniformity enhancement methods for an OLED light source

A fully solution-processed polymer electroluminescent device has a hole injection layer fabricated using a crosslinkable hole injection/transport material doped with conductivity dopants.

Solution processed crosslinkable hole injection and hole transport polymers for OLEDs

Growing community of inventors

Cupertino, CA, United States of America

Wencheng Su