Infineon Technologies Ag

Wenchao Zheng

Guenter Gerstmeier

Michael Maldei

Steven Michael Baker

Jon Stanley Berry, Ii

Brian Cousineau

Malati Hegde

Jinwhan Lee

A capacitor for a semiconductor device and a method of manufacturing a capacitor for a semiconductor device is disclosed that uses radial current flow. The capacitor includes a semiconductor substrate that includes a plurality of insulation islands. An insulation layer is formed over the semiconductor substrate. Gate electrodes are formed on top of the insulation layer. An array of CD contact pads including a plurality of CD contacts are connected to the semiconductor substrate in a first predetermined number of locations. An array of CG contact pads including at least one CG contact connected to the gate electrodes such that each CG contact is connected to a respective gate electrode above a respective insulation island in a second predetermined number of locations.

Microelectronic capacitor structure with radial current flow

Growing community of inventors

Raleigh, NC, United States of America

Wenchao Zheng