Honeywell International Inc.

Semiconductor Manufacturing International Corp.

Honeywell Safety Products Usa, Inc.

Semiconductor Manufacturing International (shanghai) Corporation

Linhai Tianyu Pharmaceutical Co., Ltd.

Shanghai Qixun Pharmaceutical Technology Co., Ltd.

Wenbo Wang

Ling Lin

Zheng Gu

Peng Zhou

Lyndon Liu

Xiaojuan Zhu

Hanming Wu

Zhao Xia Jin

Weihai Bu

Tiecheng Qu

Weiming Zhou

Pinghua Jiang

XiaoJuan Zhu

Yolanda Wang

Xiongdong Lian

Shaofeng Yu

Botao Li

Gongyong Li

Anncy Zhou

Kunlun Qiu

Qianjie Yu

Safety plate for a harness

Various embodiments illustrated herein disclose a full body harness that includes a connector. The connector includes a first plate and a second plate, where the first plate is identical to the second plate. The first plate and the second plate includes a plurality of slits to facilitate passage of a first harness and a second harness therethrough. The first plate is rotatably coupled to the second plate such that they are rotatable with respect to each other. Such a connector automatically enables easy adjustment of the harness based on an activity of a user who is wearing the harness.

Harness connector

Various embodiments illustrated herein disclose a full body harness that includes a connector. The connector includes a first plate and a second plate, where the first plate is identical to the second plate. The first plate and the second plate includes a plurality of slits to facilitate passage of a first harness and a second harness there through. The first plate is rotatably coupled to the second plate such that they are rotatable with respect to each other. Such a connector automatically enables easy adjustment of the harness based on an activity of a user who is wearing the harness.

Pivot link

Harness

Harness padding

Disclosed is a method for preparing a 2-fluoroacrylate, comprising the steps of: (1) mixing a vinyl ether having the structure of formula A with dichloromonofluoromethane to yield a substituted cyclopropane compound having the structure of formula B; (2) mixing the substituted cyclopropane compound having the structure of formula B with ROH to yield an acetal product having the structure of formula C, followed by hydrolysis to yield 2-fluoroacrylaldehyde having the structure of formula D; or reacting the substituted cyclopropane compound having the structure of formula B with water to yield 2-fluoroacrylaldehyde having the structure of formula D via hydrolysis; (3) oxidizing 2-fluoroacrylaldehyde having the structure of formula D to yield 2-fluoroacrylic acid having the structure of formula E; and (4) mixing 2-fluoroacrylic acid having the structure of formula E with ROH to yield a 2-fluoroacrylate having the structure of formula F.

Method for preparing 2-fluoroacrylates

A semiconductor device may include the following elements: a first doped region; a second doped region, which contacts the first doped region; a third doped region, which contacts the first doped region; a first dielectric layer, which contacts the above-mentioned doped regions; a first gate member, which is conductive and comprises a first gate portion, a second gate portion, and a third gate portion, wherein the first gate portion contacts the first dielectric layer, wherein the second gate portion is positioned between the first gate portion and the third gate portion, and wherein a width of the second portion is unequal to a width of the third gate portion; a doped portion, which is positioned between the third gate portion and the third doped region; a second gate member; and a second dielectric layer, which is positioned between the third gate portion and the second gate member.

Semiconductor device, related manufacturing method, and related electronic device

A fin field effect transistor (FET) including a fin structure and a method for forming the fin FET are provided. In an exemplary method, the fin FET can be formed by forming at least one fin seed, including a top surface and sidewalls, on a substrate. A first semiconductor layer can then be formed at least on the sidewalls of the at least one fin seed. A second semiconductor layer can be formed on the first semiconductor layer. The second semiconductor layer and the at least one fin seed can be made of a same material. The first semiconductor layer can be removed to form a fin structure including the at least one fin seed and the second semiconductor layer.

Fin field effect transistor and fabrication method

A method is provided for fabricating a CMOS device. The method includes providing a semiconductor substrate having a first active region and a second active region. The method also includes forming a first trench on the first active region using a first barrier layer and a second substitute gate electrode layer to protect a gate region on the second active region, followed by forming a first work function layer and a first metal gate in the first trench. Further, the method includes forming a second trench on the second active region using a second barrier layer to protect the first metal gate structure, followed by forming a second work function layer and a second metal gate in the second trench.

CMOS devices and fabrication method

Growing community of inventors

Shanghai, China

Wenbo Wang