United Microelectronics Corp.

Wenbo Ding

Yu-Yang Chen

Wang Xiang

Sheng Zhang

Chien-Kee Pang

Wei Xu

Jubao Zhang

Xiaofei Han

Ming Thai Chai

Meng Xie

A method for fabricating a semiconductor device includes the steps of: forming a gate structure on a substrate; forming a source/drain region adjacent to the gate structure; performing a first cleaning process; performing a first rapid thermal anneal (RTA) process to remove oxygen cluster in the substrate; forming a metal layer on the source/drain region; and performing a second RTA process to transform the metal layer into a silicide layer.

Method for fabricating semiconductor device

A method of fabricating a semiconductor device includes forming a memory gate and a hard mask layer on the memory gate, forming a select gate on a sidewall of the memory gate and the hard mask layer, performing a selective oxidation process to form an oxide layer on the hard mask layer and the select gate, wherein a portion of the oxide layer on the select gate is thicker than a portion of the oxide layer on the hard mask layer, and removing the oxide layer on the hard mask layer and the hard mask layer to expose a top surface of the memory gate.

Method of fabricating a flash memory

The present invention provides a flash cell structure and a method of fabricating the same. The flash cell structure includes a semiconductor substrate, a stacked gate structure disposed on the semiconductor substrate, a first doped region disposed in the semiconductor substrate at a side of the stacked gate structure, a first dielectric layer, a second dielectric layer, and an erase gate. The stacked gate structure includes a floating gate insulated from the semiconductor substrate and a control gate disposed on the floating gate and insulated from the floating gate. The first dielectric layer is disposed on a sidewall of the floating gate. The second dielectric layer is disposed on the first doped region. A thickness of the first dielectric layer is less than a thickness of the second dielectric layer.

Flash cell structure and method of fabricating the same

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Singapore, Singapore

Wenbo Ding