Taiwan Semiconductor Manufacturing Comp. Ltd.

Wen-Zhong Ho

Yi-Wei Chiu

Tzu-Chan Weng

En-Ping Lin

Chi-Chin Hsu

A method includes etching a first oxide layer in a wafer. The etching is performed in an etcher having a top plate overlapping the wafer, and the top plate is formed of a non-oxygen-containing material. The method further includes etching a nitride layer underlying the first oxide layer in the etcher until a top surface of a second oxide layer underlying the nitride layer is exposed. The wafer is then removed from the etcher, with the top surface of the second oxide layer exposed when the wafer is removed.

Etching using chamber with top plate formed of non-oxygen containing material

A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a base and a fin structure over the base. The fin structure has sidewalls. The semiconductor device structure includes a passivation layer over the sidewalls. The passivation layer includes dopants. The dopants include at least one element selected from group 4A elements, and the dopants and the substrate are made of different materials. The semiconductor device structure includes an isolation layer over the base and surrounding the fin structure and the passivation layer. A first upper portion of the fin structure and a second upper portion of the passivation layer protrude from the isolation layer. The semiconductor device structure includes a gate electrode over the first upper portion of the fin structure and the second upper portion of the passivation layer.

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Tainan, Taiwan

Wen-Zhong Ho