Xiamen Sanan Optoelectronics Technology Co., Ltd.

Xiamen San'an Optoelectronics Co., Ltd

Wen-Yu Lin

Meng-Hsin Yeh

Chen-Ke Hsu

Zhibai Zhong

Chung-Ying Chang

Yun-Ming Lo

Chien-Yao Tseng

Shengchang Chen

Su-Hui Lin

Chia-En Lee

Kechuang Lin

Jie Zhang

Jianming Liu

Yen-Chih Chiang

Heqing Deng

A light-emitting diode includes an N-type cladding layer, and a superlattice structure, an active layer, a P-type electron-blocking layer, and a P-type cladding layer disposed on the N-type cladding layer in such order. The superlattice structure includes at least one first layered element which has a sub-layer made of a nitride-based semiconductor material including Al, and having an energy band gap greater than that of said electron-blocking layer. The P-type electron-blocking layer is made of a nitride-based semiconductor material including Al, and has an energy band gap greater than that of the P-type cladding layer.

Light-emitting diode

An epitaxial light emitting structure includes n-type and p-type semiconductor layers, and a light emitting component disposed therebetween. The light emitting component includes a multiple quantum well structure which contains a plurality of first periodic layered elements, each of which includes first, second and third layers alternately stacked on one another. For each of the first periodic layered elements, the first, second and third layers respectively have a first energy bandgap (Eg), a second energy bandgap (Eg), and a third energy bandgap (Eg) that satisfy a relationship of Eg&#x3c;Eg&#x3c;Eg. Also disclosed herein is a light emitting diode which includes the aforementioned epitaxial light emitting structure.

Epitaxial light emitting structure and light emitting diode

A light-emitting diode includes an N-type cladding layer, and a superlattice structure, an active layer, a P-type electron-blocking layer, and a P-type cladding layer disposed on the N-type cladding layer in such order. The superlattice structure includes at least one first layered element which has first, second, and third sub-layers that are stacked on one another in a direction away from the N-type cladding layer. The first, second, and third sub-layers have energy band gaps Eg, Eg, and Egwhich satisfy a relationship of Eg&#x3c;Eg&#x3c;Eg. In addition, Egis greater than an energy band gap of the P-type electron-blocking layer.

A nitride underlayer structure includes a sputtered AlN buffer layer with open band-shaped holes, thus providing a stress release path before the nitride film is grown over the buffer layer. A light-emitting diode with such nitride underlayer structure has improved lattice quality of the nitride underlayer structure and the problem of surface cracks is resolved. A fabrication method of the nitride underlayer includes providing a substrate and forming a band-shaped material layer over the substrate; sputtering an AlN material layer over the band-shaped material layer and the substrate to form a flat film; scanning back and forth from the substrate end with a laser beam to decompose the band-shaped material layer to form a sputtered AlN buffer layer with flat surface and band-shaped holes inside; and forming an AlInGaN layer (0&#x2264;x&#x2264;1, 0&#x2264;y&#x2264;1) over the sputtered AlN buffer layer.

Nitride underlayer and fabrication method thereof

A fabrication method of a nitride underlayer structure includes, during AlN layer sputtering with PVD, a small amount of non-Al material is doped to form nitride with decomposition temperature lower than that of AlN. A high-temperature annealing is then performed. After annealing, the AlN layer has a rough surface with microscopic ups and downs instead of a flat surface. By continuing AlGaN growth via MOCVD over this surface, the stress can be released via 3D-2D mode conversion, thus improving AlN cracks.

A flip-chip light emitting device includes: a light-emitting epitaxial laminated layer with two opposite surfaces, in which, the first surface is a light-emitting surface; a first electrode and a second electrode that are separated from each other on the second surface of the light-emitting epitaxial laminated layer; a non-conductive substrate with two opposite surfaces and two side walls connecting those two surfaces, in which, the first surface is connected to the light-emitting epitaxial laminated layer through the first and the second electrodes; a first external electrode and a second external electrode on the second surface of the non-conductive substrate, which extend to the side walls of the non-conductive substrate till and at least cover parts of the side walls of the first and the second electrodes to form electrical connection.

Flip-chip light emitting device and fabrication method

A nitride light-emitting diode including: a substrate with sub-micro patterns over the surface, which is divided into a growth region and a non-growth region; a growth blocking layer, formed in the non-growth region of the substrate for blocking epitaxial growth in the non-growth region of the substrate; a light-emitting epitaxial layer, comprising an n-type layer, a light-emitting layer and a p-type layer, formed in the growth region of the substrate, which extends to the non-growth region through lateral epitaxy and covers the growth blocking layer; wherein, the refractive index of the growth blocking layer is less than that of the light-emitting epitaxial layer and the growth blocking layer forms undulating morphology along the sub-micro patterns of the substrate, thus increasing light extraction interface of LED, generating refractive index difference between the light-emitting epitaxial layer and the light extraction interface and improving light extraction efficiency.

Nitride light emitting diode and fabrication method thereof

An epitaxial structure of light emitting diode with a current modulation layer, and more specifically, a high-resistivity material is injected to change the current conduction path, and implementation of the main structure is to grow a high-resistivity material (e.g., InAlGaN) over the N-type conductive layer or the P-type conductive layer till part of current conduction path is exposed through high-temperature Hin-situ etching in the reacting furnace and to grow the N-type or the P-type conductive layer for coverage. This design for forming a current modulation layer without second epitaxial growth provides the injected current with a better spreading path in the N-type conductive layer and the P-type conductive layer, which more effectively and uniformly injects the current to the active layer and improves luminous efficiency.

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Xiamen, China

Wen-Yu Lin