Microcoating Technologies, Inc.

Morton International, Inc.

Other

Georgia Tech Research Corporation

Shipley Company LLC

Wen-Yi Lin

Andrew Tye Hunt

Tzyy Jiuan Hwang

Shara S Shoup

Richard W Carpenter

Helmut G Hornis

Michelle Hendrick

Stephen E Bottomley

Wesley S Hackenberger

Robert F Speyer

Girish N Deshpande

Hong Shao

Henry A Luten, Iii

Tom R Shrout

Joe Thomas

Tzyy-Jiuan Jan

John Eric McEntyre

Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

Epitaxial thin films

Thin layer capacitors are formed from a first flexible metal layer, a dielectric layer between about 0.03 and about 2 microns deposited thereon, and a second flexible metal layer deposited on the dielectric layer. The first flexible metal layer may either be a metal foil, such as a copper, aluminum, or nickel foil, or a metal layer deposited on a polymeric support sheet. Depositions of the layers is by or is facilitate by combustion chemical vapor deposition or controlled atmosphere chemical vapor deposition.

Formation of thin film capacitors

Nanolaminates are formed by alternating deposition, e.g., by combustion chemical vapor deposition (CCVD), layers of resistive material and layers of dielectric material. Outer resistive material layers are patterned to form discrete patches of resistive material. Electrical pathways between opposed patches of resistive material on opposite sides of the laminate act as capacitors. Electrical pathways horizontally through resistive material layers, which may be connected by via plated holes, act as resistors.

Nanolaminated thin film circuitry materials

A method is provided for forming a patterned layer of resistive material in electrical contact with a layer of electrically conducting material. A three-layer structure is formed which comprises a metal conductive layer, an intermediate layer formed of material which is degradable by a chemical etchant, and a layer of resistive material of sufficient porosity such that the chemical etchant for said intermediate layer may seep through the resistive material and chemically degrade said intermediate layer so that the resistive material may be ablated from said conductive layer wherever the intermediate layer is chemically degraded. A patterned photoresist layer is formed on the resistive material layer. The resistive material layer is exposed to the chemical etchant for said intermediate layer so that the etchant seeps through the porous resistive material layer and degrades the intermediate layer. Then, portions of the resistive material layer are ablated away wherever the intermediate layer has been degraded.

Formation of thin film resistors

In thin layer resistors comprising a patch of a layer of resistive material on an insulating substrate and means at spaced apart locations on the patch, the resistive material is formed of 95 to 99.5 wt % of a zero valence metal and between 5 and 0.5 wt % of a dielectric material.

Resistors for electronic packaging

Resistors are formed by selective etching from layered thin film material comprising an insulating substrate, a resistive material which is a mixture of a zero valence metal and a dielectric material, and a layer of conductive material.

Deposition of resistor materials directly on insulating substrates

Precursor solutions are provided to produce thin film resistive materials by combustion chemical vapor deposition (CCVD) or controlled atmosphere combustion chemical vapor deposition (CACCVD). The resistive material may be a mixture of a zero valence metal and a dielectric material, or the resistive materials may be a conductive oxide.

Precursor solution compositions for electronic devices using CCVD

A composition of Ba.sub.2 Ti.sub.9 O.sub.20 suitable for use in microwave wireless communications is provided. Ba.sub.2 Ti.sub.9 O.sub.20 doped with Zr is formed by combining starting materials containing barium, titanium and zirconium. In a preferred embodiment of the invention, zirconium-doped Ba.sub.2 Ti.sub.9 O.sub.20 is formed by combining BaCO.sub.3 and TiO.sub.2, and substituting an appropriate amount of ZrO.sub.2 for a portion of the TiO.sub.2. The relative proportion of Ba.sub.2 Ti.sub.9 O.sub.20 obtained as a result is increased over that which may be obtained using other dopants, such as tin (Sn). Forming Ba.sub.2 Ti.sub.9 O.sub.20 with a Zr dopant in the appropriate amount also results in greater stability of the dielectric constant, an increase in the quality factor, and a decrease in the temperature coefficient than exhibited by other compositions of Ba.sub.2 Ti.sub.9 O.sub.20 that lack a Zr dopant.

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Doraville, GA, United States of America

Wen-Yi Lin