United Microelectronics Corp.

Wen-Wen Zhang

Kun-Chen Ho

Chun-Lung Chen

Chung-Yi Chiu

Ming-Chou Lu

Hui-Lin Wang

Dien-Yang Lu

Bo-Yun Huang

A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming a contact etch stop layer (CESL) on the gate structure, forming an interlayer dielectric (ILD) layer on the CESL, forming a contact plug in the ILD layer and adjacent to the gate structure, forming a first stop layer on the ILD layer, and removing the first stop layer and the ILD layer around the gate structure to form an air gap exposing the CESL.

Semiconductor device and method for fabricating the same

A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming an interlayer dielectric (ILD) layer on the gate structure, forming a contact hole in the ILD layer adjacent to the gate structure, performing a plasma doping process to form a doped layer in the ILD layer and a source/drain region adjacent to the gate structure, forming a conductive layer in the contact hole, planarizing the conductive layer to form a contact plug, removing the doped layer to form an air gap adjacent to the contact plug, and then forming a stop layer on the ILD layer and the contact plug.

A magnetoresistive random access memory (MRAM) structure is provided in the present invention, including multiple MRAM cells, and an atomic layer deposition dielectric layer between and at outer sides of the MRAM cells, wherein the material of top electrode layer is titanium nitride, and the nitrogen percentage is greater than titanium percentage and further greater than oxygen percentage in the titanium nitride, and the nitrogen percentage gradually increases inward from the top surface of top electrode layer to a depth and then start to gradually decrease to a first level and then remains constant, and the titanium percentage gradually decreases inward from the top surface of top electrode layer to the depth and then start to gradually increase to a second level and then remains constant.

Growing community of inventors

Changhua County, Taiwan

Wen-Wen Zhang