Industrial Technology Research Institute

Au Optronics Corporation

Chunghwa Picture Tubes, Ltd.

Hannstar Display Corporation

Chi Mei Optoelectronics Corporation

Toppoly Optoelectronics Corporation

Taiwan Tft Lcd Association

Wen-Tung Wang

Yu-Cheng Chen

Jing-Yi Yan

Kuo-Lung Lo

Ming-Huan Yang

Kuo-Chang Lee

Chien-Ju Lee

Shuo-Wei Liang

Yuan-Tung Dai

Jung-Fang Chang

Liang-Hsiang Chen

Tzeng-Shii Tsai

Chia-Hsiang Chen

Bo-Wen Xiao

Jeng-Hung Sun

Chia-Hao Tsai

Lin-En Chou

Ching-Hsuan Tang

Hung-Chien Lin

Guo-Ren Hu

Wen-Lung Chen

Yueh-Hua Lee

Jyh-Luen Chen

Chi-Wei Chao

Chen-Yu Chiang

Wei-Ben Wang

Ying-Chia Chen

Bo-Cheng Kung

Yao-Lun Hsu

Yew-Chung Wu

A thin-film device may include a carrier, a release layer, a stacking structure, and a flexible substrate. The release layer may be overlaid on the carrier, and the stacking structure is overlaid on the release layer. The stacking structure may include a first protective layer and a second protective layer, wherein the refractive index of the first protective layer exceeds that of the second protective layer. The flexible substrate may be overlaid on the release layer.

Thin-film device

A transparent display panel includes a substrate and a pixel array. The pixel array is formed on the substrate and includes a plurality of data lines and a plurality of scan lines. The data lines and the scan lines surround a plurality of pixel regions. Each pixel region defines a transparent region and an opaque region, wherein each transparent region occupies a relative position in the corresponding pixel region and at least three relative positions successively arranged along an axial direction are different.

Transparent display panel

A sensing element for electromagnetic wave detection, electrical radiography imaging system applying the element and method thereof is provided. The sensing element may include a substrate, an active component on the substrate, a plurality of first electrodes on the substrate, a plurality of second electrodes on the substrate, a first blocking layer, a photo-conversion layer on the first blocking layer, and a third electrode on the photo-conversion layer. The plurality of first electrodes is coupled together. The plurality of first electrodes is interlaced with the plurality of second electrodes and is coupled together. The first blocking layer is on the active component, the plurality of first electrodes, and the plurality of second electrodes. The photo-conversion layer is for absorbing electromagnetic wave transmitted through an object being imaged by a radiography imaging system and generates electric charges collected by the plurality of first and second electrodes, and the third electrodes.

Electrical radiography imaging system and method thereof

Display apparatuses and mounting devices are disclosed. The display apparatuses may include a display panel for displaying visual information and a mounting device coupled with the display panel and movably coupled with a supporting base. The mounting device may comprise a panel-mount interface coupled with the display panel and a receiving device capable of being configured to be at least partially embedded into the supporting base. The panel-mount interface may be coupled with the receiving device through a coupling device comprising a joining piece and at least one of a plurality of receiving holes or at least one sliding groove. The joining piece may be movable among the plurality of the receiving holes or within the at least one sliding groove.

Mounting systems for display devices

A method for producing a thin film transistor includes providing a glass substrate; disposing a positive photosensitive coating on the glass substrate; providing a transparent molding plate having a plurality of ladder opaque protrusions that are arranged in accordance with a predetermined pattern and that have at least two different depths; pressing the transparent molding plate into the positive photosensitive coating without contacting the glass substrate; exposing a part of the positive photosensitive coating which is unshielded under the ladder opaque protrusions, with a UV light; separating the transparent molding plate from the glass substrate after the step of exposing; and removing the part of the positive photosensitive coating, which is unshielded under the ladder opaque protrusions and not cured, using a chemical solvent, whereby the thin film transistor is formed in a pattern having more than two different depths.

Method for producing a thin film transistor

A process for fabricating passive plastic displays, comprising the steps of: adopting a roll-to-roll coating machine for fabricating a bottom substrate having a fist patterned conducting line, fabricating a top substrate having a second patterned conducting line and an active area of polymeric liquid crystal on the surface of the top substrate by means of a roll-to-roll coating machine, and sealing the top and the bottom substrates by means of a roll-to-roll coating machine to form a plurality of display panels. Due to the continuous fabrication of the present invention with the low-cost apparatuses, applications of the plastic displays in the low-end products can be accelerated.

Roll-to-roll process for fabricating passive matrix plastic displays

The present invention relates to a method for transferring devices. A sacrificing layer is positioned before the devices are manufactured, and a transition substrate is pasted on the devices. Then, a method for lateral wet etching or a method for lateral wet etching with mechanical stripping is applied for removing or stripping the sacrificing layer so as to separate the devices and a substrate. The separated devices are transferred to the transition substrate so as to meet the requirements for various products and applications.

Method of transferring devices by lateral etching of a sacrificial layer

The invention discloses a manufacturing method for improving the reliability of polysilicon thin film transistors to solve electric leaking problem due to the roughness of polysilicon layer surface. In the thin film transistor manufacturing process, a polysilicon layer surface is oxidized to produce a silicon oxide layer which is then removed by an etching solution. This method can planarize bumps on the polysilicon layer generated due to re-crystallization so as to effectively lower the roughness of the polysilicon surface, thus increasing the reliability of thin film transistors.

Manufacturing method for improving reliability of polysilicon thin film transistors

A method for forming a thin film transistor (TFT) is disclosed. The invention uses metal electroless plating or chemical displacement processes to form metal clusters adjacent the sidewall of amorphous silicon active region pattern so as to crystallize the amorphous silicon amid the subsequently performed metal induced lateral crystallization (MILC) process. The amorphous silicon is crystallized to form polysilicon having parallel grains. Since the amorphous silicon will crystallize with a specific angle which is measured between the grain orientation and the side wall of the amorphous silicon, a tilt channel connecting the source and drain region of the TFT is utilized to upgrade the electron mobility across the tilt channel, wherein the grain orientation of polysilicon in the tilt channel perpendicular to a gate electrode which is subsequently formed above the tilt channel.

Method for forming thin film transistor

Growing community of inventors

Hsinchu County, Taiwan

Wen-Tung Wang