Siliconware Precision Industries Co., Ltd.

Wen-Tsung Tseng

Ho-Yi Tsai

Yi-Che Lai

Cheng-Hsu Hsiao

Chang-Fu Lin

Chih-Ming Huang

Shih-Kuang Chiu

Fang-Lin Tsai

Mao-Hua Yeh

Chen-Yu Huang

Fang-Yu Liang

Hung-Hsien Chang

Wen-Home Huang

Chien-Ping Huang

Chun-Tang Lin

Pin-Cheng Huang

Provided is a substrate structure, including: a substrate body having a conductive contact; an insulating layer formed on the substrate body with the conductive contact exposed therefrom; and an insulating protection layer formed on a portion of a surface of the insulating layer, and having a plurality of openings corresponding to the conductive contact, wherein at least one of the openings is disposed at an outer periphery of the conductive contact. Accordingly, the insulating protection layer uses the openings to dissipate and disperse residual stresses in a manufacturing process of high operating temperatures.

Substrate structure

A substrate structure is provided, including a substrate body having a conductive pad, an insulation layer formed on the substrate body and exposing the conductive pad, a conductive pillar disposed on the conductive pad, and a metal pad disposed on the insulation layer and electrically connected to the conductive pillar. A conductive component can be coupled to the metal pad. During a high-temperature process, the conductive pillar and the metal pad disperse the remaining stress generated due to heat, thereby preventing the conductive component from being cracked.

A semiconductor package is provided, including a semiconductor substrate having a plurality of conductive vias, a buffer layer formed on the semiconductor substrate, a plurality of conductive pads formed on end surfaces of the conductive vias and covering the buffer layer. During a reflow process, the buffer layer greatly reduces the thermal stress, thereby eliminating the occurrence of cracking at the interface of conductive pads. A method of fabricating such a semiconductor package is also provided.

Semiconductor package and method of fabricating the same

A semiconductor package is provided, including a semiconductor substrate having a plurality of conductive vias, a buffer layer formed on the semiconductor substrate, a plurality of conductive pads formed on end surfaces of the conductive vias and covering the buffer layer. During a reflow process, the buffer layer greatly reduces the thermal stress, thereby eliminating the occurance of cracking at the interface of conductive pads. A method of fabricating such a semiconductor package is also provided.

A method of testing a semiconductor package is provided, including: disposing at least an interposer on a top surface of an adhesive layer, the interposer having a first surface and a second surface opposite to the first surface, a plurality of conductive elements disposed between the second surface of the interposer and the adhesive layer; disposing at least a semiconductor chip on the first surface of the interposer, and performing an electrical test on the semiconductor chip via the conductive elements, wherein if there are a plurality of semiconductor chips that are disposed on the first surface of the interposer, the step of disposing the semiconductor chip and performing the electrical test on the semiconductor chip is iterated; and removing the adhesive layer. By using the method, the fabrication cost and equipment cost of the semiconductor package are reduced, and product yield is increased.

Method of testing a semiconductor package

A semiconductor package and a fabrication method thereof are disclosed. The fabrication method includes the steps of providing a semiconductor chip having an active surface and a non-active surface opposing to the active surface, roughening a peripheral portion of the non-active surface so as to divide the non-active surface into the peripheral portion formed with a roughened structure and a non-roughened central portion, mounting the semiconductor chip on a chip carrier via a plurality of solder bumps formed on the active surface, forming an encapsulant on the chip carrier to encapsulate the semiconductor chip. The roughened structure formed on the peripheral portion of the non-active surface of the semiconductor chip can reinforce the bonding between the semiconductor chip and the encapsulant, and the non-roughened central portion of the non-active surface of the semiconductor chip can maintain the structural strength of the semiconductor chip.

Fabrication method of semiconductor package

Semiconductor package and fabrication method thereof

A heat-dissipating semiconductor package structure and a method for manufacturing the same is disclosed. The method includes: disposing on and electrically connecting to a chip carrier at least a semiconductor chip and a package unit; disposing on the top surface of the package unit a heat-dissipating element having a flat portion and a supporting portion via the flat portion; receiving the package unit and semiconductor chip in a receiving space formed by the flat portion and supporting portion of the heat-dissipating element; and forming on the chip carrier encapsulant for encapsulating the package unit, semiconductor chip, and heat-dissipating element. The heat-dissipating element dissipates heat generated by the package unit, provides EMI shielding, prevents delamination between the package unit and the encapsulant, decreases thermal resistance, and prevents cracking.

Heat-dissipating semiconductor package structure and method for manufacturing the same

An electronic carrier board is provided, including a carrier, at least two paired bond pads formed on the carrier, and a protective layer covering the carrier. The protective layer is formed with openings corresponding in position to the two bond pads. The openings are aligned in the same direction and expose at least a first sidewall and a second sidewall of each of the two bond pads. The first sidewall is perpendicular to an alignment direction of the bond pads and the second sidewall is parallel to the alignment direction of the bond pads. A distance between the first sidewall of at least one of the bond pads and a corresponding side of a corresponding one of the openings is at least about 50 &#x3bc;m greater than a distance between the second sidewall of the at least one bond pad and a corresponding side of the corresponding opening.

Electronic carrier board applicable to surface mount technology

An electronic carrier board is provided, including a carrier, at least two paired bond pads formed on the carrier, and a protective layer covering the carrier. The protective layer is formed with openings corresponding in position to the two bond pads. The openings are aligned in the same direction and expose at least a first sidewall and a fourth sidewall of each of the two bond pads. The first sidewall and the fourth sidewall are both perpendicular to an alignment direction of the bond pads. A distance between the first sidewall of at least one of the bond pads and a corresponding side of a corresponding one of the openings is at least about 50 &#x3bc;m greater than a distance between the fourth sidewall of the at least one bond pad and a corresponding side of the corresponding opening.

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Taichung, Taiwan

Wen-Tsung Tseng