Taiwan Semiconductor Manufacturing Comp. Ltd.

Wen-Tsung Chen

Hung-Che Liao

Ping-Hao Lin

Hung-Ta Huang

Hung-Yu Chiu

Chih-Ming Huang

Po-Yuan Su

Chao-Hsuan Pan

An integrated circuit and a method of fabricating the integrated circuit are provided. In various embodiments, the integrated circuit includes a semiconductor substrate, at least one deep n-well in the semiconductor substrate, at least one p-channel metal-oxide-semiconductor transistor in the deep n-well, at least one n-channel metal-oxide-semiconductor transistor outside of the deep n-well, an first interconnect structure, and a protection component. Both of the p-channel metal-oxide-semiconductor transistor and the n-channel metal-oxide-semiconductor transistor are disposed in the semiconductor substrate, and are electrically coupled by the first interconnect structure. The protection component is disposed in the semiconductor substrate, wherein the protection component is electrically coupled to the deep n-well.

Integrated circuit and fabricating method thereof

Growing community of inventors

Tainan, Taiwan

Wen-Tsung Chen