Other

Taipei Anjet Corporation

Primax Electronics Ltd.

Wen-Tsung Chang

Wen-Chin Wu

Nobuo Machida

Che-Sheng Chuang

A method for fabricating a junction barrier Schottky diode device is disclosed. The junction barrier Schottky device includes an N-type semiconductor layer, a plurality of first P-type doped areas, a plurality of second P-type doped areas, and a conductive metal layer. The first P-type doped areas and the second P-type doped are formed in the N-type semiconductor layer. The second P-type doped areas are self-alignedly formed above the first P-type doped areas. The spacing between every neighboring two of the second P-type doped areas is larger than the spacing between every neighboring two of the first P-type doped areas. The conductive metal layer, formed on the N-type semiconductor layer, covers the first P-type doped areas and the second P-type doped areas.

Junction barrier Schottky diode device and method for fabricating the same

A junction barrier Schottky diode device and a method for fabricating the same is disclosed. In the junction barrier Schottky device includes an N-type semiconductor layer, a plurality of first P-type doped areas, a plurality of second P-type doped areas, and a conductive metal layer. The first P-type doped areas and the second P-type doped are formed in the N-type semiconductor layer. The second P-type doped areas are self-alignedly formed above the first P-type doped areas. The spacing between every neighboring two of the second P-type doped areas is larger than the spacing between every neighboring two of the first P-type doped areas. The conductive metal layer, formed on the N-type semiconductor layer, covers the first P-type doped areas and the second P-type doped areas.

The present invention provides an ESD protection device with the mechanism of punch through to achieve low trigger voltage. At the same time, the structure of ESD protection device includes parasitic NPN and parasitic PNP. Parasitic NPN and parasitic PNP will form a silicon controlled rectifier (SCR) device with snapback behavior to increase the protection capability of ESD protection device.

ESD protection device with low trigger voltage

A shelf with interlayers may include a shelf made by a plurality of connectors and panels, wherein both sides of the panel has at least one connecting portion and connecting unit, and connecting unit has a connecting groove corresponding to the panel, and the connecting groove is configured to engage with auxiliary panels to increase the variability of using an inner space of the shelf.

Shelf with interlayers

An assembled structure with connectors may include a first unit and a second unit. One side of the first unit extends to protrudingly form a plurality of protruding ribs that define a plurality of horizontal and vertical long connecting slots, and the first unit and second unit engage with each other. Also, a plurality of engaging slots are formed between the first unit and second unit, and the other side of the second unit has elongated slots. Thus, a board is connected with the connector at four corners of the board, and the first unit has long connecting slots that are used to circularly form a square frame. A backboard is connected with the engaging slot and the board to form a usable assembled structure.

Assembled structure with connectors

The present invention relates to a Huffman decoding method. Firstly, a Huffman table including multiple Huffman codes and multiple corresponding size/symbol codes is extracted. Each Huffman code comprises a codeword and each size/symbol code comprises a size code and a symbol code. Then, multiple mask codes are generated according to the size codes. Then, masking operations are performed on successive 16 bits of the compression bit stream and the mask codes, thereby outputting multiple masking results. Subsequently, logic operations on the masking results and the Huffman codes, thereby generating multiple are performed on the new Huffman codes, wherein each new Huffman code includes the codeword. It is discriminated whether the 16 bits of the compression bit stream complies with a specific one of new Huffman codes, thereby outputting the size/symbol code corresponding to the codeword.

Huffman decoding method

An improved structure of respirator filter comprised of a laminated layers of fireproof fabric, static fibers, active carbon fibers and non-woven filter cotton; interlaced with airflow guides in among the layers of the filter; a hole or multiple holes being respectively provided at the center or in the peripheral of another airflow guide so to create air conduction for increasing area and time for the gas to contact the filter for improved smoke and toxicity filtration effects.

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Taipei, Taiwan

Wen-Tsung Chang