Globalfoundries Singapore Pte. Ltd.

Nanyang Technological University

Wen Siang Lew

Chim Seng Seet

Wai Cheung Law

Chandrasekhar Murapaka

Taiebeh Tahmasebi

Kai Hung Alex See

Pankaj Sethi

Indra Purnama

Danny Pak-Chum Shum

Dimitri Houssameddine

Desmond Jia Jun Loy

Kazutaka Yamane

Michael Nicolas Albert Tran

Arindam Basu

Sarjoosing Goolaup

Chinkhanlun Guite

Grayson Dao Hwee Wong

Chu Keong Gerard Joseph Lim

Gerard Joseph Lim

Chandra Sekhar Murapaka

A magnetic logic device having two magnetic elements and a conductive element coupled to the two magnetic elements and arranged at least substantially perpendicular to the magnetic elements, wherein the device is configured, for each magnetic element, to have a magnetisation state with a perpendicular easy axis, and to switch the magnetisation state in response to a spin current generated in the magnetic element in response to a write current applied to the magnetic element, and configured to generate, as an output, a Hall voltage across the conductive element in response to a respective read current applied to each magnetic element, wherein a magnitude of the Hall voltage is variable, depending on a direction of the magnetisation state of each magnetic element and a direction of the respective read current applied to each magnetic element, for the device to provide outputs corresponding to one of a plurality of logical operations.

Magnetic logic device, circuit having magnetic logic devices, and methods for controlling the magnetic logic device and the circuit

According to various embodiments, a spin diode device may include a magnetic tunnel junction stack. The magnetic tunnel junction stack may include a lower magnetic layer, a tunnel barrier layer over the lower magnetic layer, and an upper magnetic layer over the tunnel barrier layer. The lower magnetic layer may include a lower magnetic film. The tunnel barrier layer comprising an insulating material. The upper magnetic layer may include an upper magnetic film. Each of the lower magnetic film and the upper magnetic film may have perpendicular magnetic anisotropy.

Spin diode devices

Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a magnetic tunnel junction stack. The magnetic tunnel junction stack includes a first free layer that is magnetic, a second free layer that is magnetic, and an insertion layer positioned between the first and second free layers. The insertion layer is non-magnetic, and the insertion layer includes terbium.

Integrated circuits with magnetic tunnel junctions and methods of producing the same

Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a magnetic tunnel junction stack. The magnetic tunnel junction stack includes a seed layer, first and second pinned layers, and a coupling layer. The seed layer includes holmium. The first pinned layer overlies the seed layer, where the first pinned layer is magnetic, and the non-magnetic coupling layer overlies the first pinned layer. The second pinned layer overlies the coupling layer, where the second pinned layer is also magnetic.

Non-volatile memory (NVM) devices, resistive random access memory (RRAM) devices and methods for fabricating such devices are provided. In an exemplary embodiment, a non-volatile memory (NVM) device includes a first electrode and a second electrode positioned above the first electrode. Further, the NVM device includes a variable resistance material layer positioned between the first electrode and the second electrode. The variable resistance material layer contains magnesium oxide.

Non-volatile memory devices, RRAM devices and methods for fabricating RRAM devices with magnesium oxide insulator layers

A magnetic random number generator is disclosed. The magnetic random number generator comprises: a) a Hall cross structure comprising at least one magnetic nanowire with perpendicular magnetic anisotropy; b) an in-plane pulsed current generator operable to generate stochastic nucleation of domain walls (DWs) in the Hall cross structure; and c) a sensor configured to measure a parameter of the Hall cross structure upon DW nucleation, wherein said parameter has a value representing a random number. A greater number of Hall cross structures may be employed to generate a random number having a greater number of bits.

Magnetic random number generator

A memory device comprising a ferromagnetic data nanowire, a ferromagnetic driver nanowire, read element and/or a spaced write element positioned about the data nanowire, wherein driving a domain wall in the driver nanowire remotely drives a domain wall in the data nanowire past the read element and/or the write element.

Memory device including a domain wall and ferromagnetic driver nanowire

A non-volatile logic device, comprising: a first input element magnetizable along a first direction to impart or change a chirality of a domain wall traversing the first input element a second input element configured to transport the domain wall, a magnetization of the second input element along a second direction representing a second logical input; a bifurcated output section comprising a pair of output elements for receiving the domain wall from the second input element, a magnetization of at least part of the output elements being changeable by propagation of the domain wall along the output elements; and a non-magnetic conductive element; wherein the magnetization in an output element after propagation of the domain wall represents a value of a logical function selectable by passing an electrical current through the non-magnetic conductive element to induce a magnetic field of a desired magnitude and direction in the second input element.

Growing community of inventors

Singapore, Singapore

Wen Siang Lew