Winbond Electronics Corporation

National Science Council

Wen-Shiang Liao

Wei-Fan Chen

Si-Chen Lee

Ming-Lun Chang

The present invention discloses a method for forming a self-aligned silicidation of a metal oxide semiconductor. The feature of the present invention is to perform an ionic implanting step before carrying on the self-aligned silicidation. The implanted ion of the present invention, such as fluorine, chlorine, bromine, iodine, boron and trifluroborane, will react with the silicon on the surface of the gate structure and the silicon substrate and a barrier effect will be formed during silicidation. Therefore, a spike phenomenon because of the penetration of cobalt or the cobalt silicide into the gate structure or the source/drain regions is prevented. The junction leakage current and the breakdown voltage of the metal oxide semiconductor are avoided.

Method for forming a self-aligned silicide of a metal oxide semiconductor

A method of fabricating a self-aligned silicide (salicide). A gate and a source/drain region are formed in the substrate. An ion implantation process is performed to dope surfaces of the gate and the source/drain region with metal ions. A thermal process is performed to have the metal ions react with silicon in surfaces of the gate and the source/drain region, so as to form silicide layers on the gate and the source/drain region. The metal ions include cobalt ions, titanium ions, nickel ions, platinum ions and palladium ions.

Method of fabricating self-aligned silicide

The present invention provides a composite passivation film deposited at low temperatures (&lt;150.degree. C.). A hydrogenated amorphous silicon nitride (a-SiN.sub.x :H) film is formed over a semiconductor device. Then a very thin layer (&gt;6.4 nm) of an amorphous silicon hydrogen (a-Si:H) film is formed over the a-SiN.sub.x :H film. Such a composite passivation film can prevent semiconductor devices from oxidation due to percolation of moisture, and maintain the electric properties and stability of the semiconductor devices.

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Miao-Li Hsien, Taiwan

Wen-Shiang Liao