Taiwan Semiconductor Manufacturing Comp. Ltd.

Wen-Shan Chang

Chin-Szu Lee

Cheng-Yi Wu

Yi-Ming Lin

Jian-Shin Tsai

Chao-Ching Chang

Min-Hui Lin

Chun-Chih Lin

C H Chen

Y T Tsai

Ming-Te Chen

Li-Chung Wang

Da-Hsiang Chou

Cheng-Chia Kuo

Jung-Chang Chen

Shih-Chang Hsu

Jong-Min Lin

Kuo-Ming Yu

Kuo-Chuan Chen

Yi-Hui Chen

An image sensor includes a substrate having a first region and a second region. The image sensor further includes a dielectric layer over the substrate. The image sensor further includes a conductive layer over the dielectric layer, wherein in the first region the conductive layer has a grid shape and in the second region a portion of the conductive layer is concave toward the substrate. The image sensor further includes a protective layer, wherein the protective layer is over the conductive layer in the first region, and over a top surface and along sidewalls of the conductive layer in the second region.

Image sensor having conductive layer and protective layer

A method of fabricating an image sensor includes depositing a first dielectric layer over a substrate, removing a portion of the first dielectric layer from the substrate to form a trench, depositing a conductive layer over the first dielectric layer and in the trench, forming a protective layer lining a top surface of the conductive layer and sidewalls and a bottom surface of the groove in the conductive layer, and removing a portion of the conductive layer to form a grid structure. A groove corresponding to the trench is formed in the conductive layer.

Image sensor and fabrication method therefor

Semiconductor devices and manufacturing method thereof are disclosed. The semiconductor device includes a substrate, a device layer, first and second conductive layers, first and second vias, and a MIM capacitor structure. The substrate includes active and passive regions. The device layer is in the active region. The first conductive layer is over the device layer. The second conductive layer is over the first conductive layer, wherein the first conductive layer is disposed between the device layer and the second conductive layer. The first via electrically connects the first and the second conductive layers. The MIM capacitor structure is between the first and the second conductive layers and in the passive region, and includes first and second electrodes and a capacitor dielectric layer therebetween. The capacitor dielectric layer includes Group IIIA-metal oxide or nitride. The second via electrically connects the second conductive layer and one of the first and second electrodes.

Semiconductor device and manufacturing method thereof

A clamp for quickly, effectively and safely removing a cathode collar from an HDP deposition chamber for routine maintenance, cleaning or replacement of the collar. The clamp includes a pair of clamp plates which are capable of pivoting movement on respective ends of a connecting rod. A clamp shoe for gripping a corresponding edge of the annular collar is provided on the bottom end of each clamp plate, and a turnbuckle is fitted with a pair of threaded shafts which engage the upper end portions of the respective clamp plates. By rotating the turnbuckle, the threaded shafts are advanced away from each other against the clamp plates, which pivot on the connecting rod and cause the clamp shoes to tightly engage respective edges of the collar. The clamp is grasped to lift the collar from the chamber and replace the collar in the chamber after cleaning or maintenance.

Collar removing clamp for HDP chamber

Growing community of inventors

Tainan, Taiwan

Wen-Shan Chang