Nan Ya Technology Corporation

Wen-Ping Liang

Kuo-Hui Su

Chiang-Hung Lin

A method for forming a semiconductor device with a vertical gate is disclosed, including providing a substrate, forming a recess in the substrate, forming a gate dielectric layer on a sidewall and a bottom of the recess, forming an adhesion layer in the recess and on the gate dielectric layer, wherein the adhesion layer is a metal silicide nitride layer, and forming a gate layer in the recess and on the adhesion layer.

Growing community of inventors

Taoyuan, Taiwan

Wen-Ping Liang