Other

Inventec Corp.

Wen-Ping Huang

Ying-Chih Lu

A method for processing power-off suitable for a server system is provided. The server system includes a first node, a second node, and a power supply. The first and second nodes share the power supply. The method includes the following steps. A power-off process is performed by the first and second nodes respectively according to a power-off signal. An interception process is activated to intercept a completion signal generated in the power-off process, and an interrupt is triggered. The interrupt is performed by an interrupt handler, so as to detect whether the first and second nodes complete a power-off process. When the first and second nodes already complete the power-off process, the interception process is inactivated and the generated completion signal is recovered and transferred to the power supply for turning off a power.

Server system and method for processing power off

A designing for a power semiconductor, and especially to a structure of a power semiconductor formed by using the basic materials including two metal plates and a ceramic plate, in the power semiconductor, mainly surfaces of the ceramic base plate provided with a receiving groove is metallized, and the metallic base plates having electric connecting pins extending outwards therefrom are placed at the two lateral sides of the ceramic base plate, then a chip is placed in the receiving groove of the ceramic base plate, and the ceramic base plate is sintered together with the two metallic base plates, thus the structure of the power semiconductor with the twin metal plates and the ceramic plate is formed.

Structure of power semiconductor with twin metal and ceramic plates

A manufacturing method for a diode group processed by injection molding on the surface thereof, the diode group is formed by having a plurality of left and right elongate tapes which are pressed to form respectively left and right contact ends, each pair of the left and right elongate tapes have a left lap end and a right lap end to sandwich a chip therebetween. Then injection molding is performed to envelop the left and right elongate tapes and to form an elongate strip having an insulation outer layer with the left and right contact ends exposed and with a recess at the bottom of and between every two neighboring chips. The recesses separate the left contact ends of the left elongate tapes from the right contact ends of the right elongate tapes but still leave the plural diodes in series connected mutually in an insulation state. The strip can be broken off at desire recesses to get a diode group having desired number of diodes processed by injection molding on the surface of the strip.

Manufacturing method for diode group processed by injection molding on the surface

A manufacturing method for rectifying diodes, wherein, a plurality of upper and lower pins are combined with a plurality of electronic chips to form a coarse blank. And then they are processed to form shaped insulating layers by molding. Each insulating layer is processed to have superficial coarseness having micro-protuberances thereon; the areas on both the lateral sides of the insulating layer are applied with electric conductive layer. The electric conductive layer is combined with the insulating layer; they are equidistantly cut with a knife into shaped rectifying diodes. The shaped rectifying diodes each is further electrically plated with a further layer of electric conductive material on both sides of the electric conductive layer to form a harder protection layer, and then finished rectifying diodes are obtained. The upper and lower pins are in the form of thin sheets, plus the small chips, the shaped rectifying diodes have small volumes. The rectifying diodes are made by mass production, hence work efficiency can be increased, while cost of production can be reduced.

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Taipei, Taiwan

Wen-Ping Huang