Infineon Technologies Ag

Nanya Technologies Corporation

Wen-Ming Lee

Christian Sichert

Kazimierz Szczypinski

Rainer Bartenschlager

Florian Schnabel

Jin Suk Mun

An integrated circuit comprising at least one signal path which is adapted to route at least one signal from an origin to a target block, said signal path comprising at least an adjustable driver circuit comprising an input and an output, which is adapted to receive an electric signal having a first signal power as an input signal and which is adapted to provide an electric signal having a second signal power as an output signal is provided. Furthermore, the integrated circuit comprises at least one interconnect having an ohmic resistance and an electric capacity and being adapted to route said electric signal having a second signal power to said target block. Furthermore, a method for manufacturing such an integrated circuit is provided.

Integrated circuit and method for manufacturing the same

A semiconductor memory device comprises a temperature dependent voltage source for outputting a voltage at its output in dependence on a temperature measured in the semiconductor memory device. At least one memory cell is provided with at least one first transistor. The first transistor includes a first transistor body, which is connected to the output of said temperature dependent voltage source.

Semiconductor memory device

Growing community of inventors

Munich, Germany

Wen-Ming Lee