Industrial Technology Research Institute

Wen-Miao Lo

Pei-Ren Jeng

Cha-Hsin Lin

Ching-Chiun Wang

Zing-Way Pei

Chia-Chieh Chang

Lurng-Sheng Lee

A method of fabricating an organic memory device is provided. In the method, a bottom electrode is formed on a substrate. A first surface treatment is performed on the bottom electrode to form a bottom surface treatment layer on a surface thereof. A polymer thin film is formed on the bottom surface treatment layer, and a top electrode is formed on the polymer thin film.

Method of fabricating organic memory device

A structure and a method of fabricating a bottom electrode of a metal-insulator-metal (MIM) capacitor are provided. First, a transition metal layer is formed on a substrate. Thereafter, a self-assembling polymer film having a nano-pattern is formed on the transition metal layer to expose a portion of the transition metal layer. Using the self-assembling polymer film as a mask, the exposed portion of the transition metal layer is treated to undergo a phase change so that the bottom electrode can achieve a nano-level of phase separation. Thereafter, the self-assembling polymer film is removed.

Bottom electrode of metal-insulator-metal capacitor

Growing community of inventors

Kaohsiung, Taiwan

Wen-Miao Lo