Taiwan Semiconductor Manufacturing Comp. Ltd.

Wen-Lung Ho

Huai-Tei Yang

Ming-Fa Wu

Tung-Gan Cheng

Tung-Lung Lai

Jer-Shien Yang

Chun-Yu Lee

I-Ling Kuo

Wen-Shyang Tsai

Wen-Han Tan

Jan-Shen Liou

Huei-Ju Yu

Kuo-Pin Shih

Chunyuan Chao

Yen-Chi Chen

Sheng-Hung Lo

Ting-Han Ou

Wen-Sung Tseng

Ming-Je Li

Methods and devices are provided wherein rotational gas-flow is generated by vortex generators to decontaminate dirty gas (e.g., gas contaminated by solid particles) in pumping lines of vacuum systems suitable for use at a semiconductor integrated circuit fabrication facility. The vacuum systems use filterless particle decontamination units wherein rotational gas-flow is applied to separate and trap solid particles from gas prior to the gas-flow entering a vacuum pump. Methods are also described whereby solid deposits along portions of pumping lines may be dislodged and removed and portions of pumping lines may be self-cleaning.

Vacuum systems in semiconductor fabrication facilities

A semiconductor apparatus is provided. The semiconductor apparatus includes a wafer carrier, and a cup surrounding the wafer carrier. The semiconductor apparatus also includes a bottom washing device located between the wafer carrier and the cup, and configured to spray washing liquid onto the cup. Therefore, the cup can be washed by the bottom washing device.

Semiconductor apparatus and washing method

Embodiments of mechanisms of forming a semiconductor device structure are provided. The semiconductor device structure is provided. The semiconductor device structure includes a substrate having a front side and a back side. The semiconductor device structure also includes devices formed on the front side of the substrate and interconnect structures formed on the devices. The semiconductor device structure further includes a protection layer formed on the back side of the substrate, and the protection layer has a thickness over about 10 A.

Mechanisms for forming protection layer on back side of wafer

A semiconductor structure includes a substrate, an imaging pixel array disposed on a first region of the substrate, a first isolation disposed in the first region, a periphery circuitry disposed on a second region of the substrate, and a second isolation disposed in the second region. The imaging pixel array has a plurality of imaging pixels configured to capture image data. The periphery circuitry has a transistor configured to receive and process the image data. The first isolation has a first depth and a first protrusion projected from a surface of the substrate. The second isolation has a second depth and a second protrusion projected from the surface of the substrate. The first protrusion has a substantially same height as the second protrusion. The first depth is different from the second depth.

Semiconductor structure and manufacturing method thereof

A hand tool for rolling an O-ring under a downward pressure into a slot opening is described. The hand tool is constructed by a tool body that has an arcuate top surface adapted for gripping by a human hand and a planar bottom surface. The planar bottom surface of the tool body is provided with a cavity adapted for receiving a pair of rotatable balls mounted juxtaposed to each other. The pair of rotatable balls are mounted on a shaft through a center aperture of the balls in the cavity in such a way that only less than half of the spherical surface of the balls is protruding beyond the planar bottom surface of the tool body.

Tool for installing seal ring

An improved ion source head for use with an ion implantation machine includes an arc chamber within which a heated filament creates an ion plasma from a source gas. The source gas is introduced into the chamber evenly through at least four, but preferably six through hole openings in a bottom liner in the chamber. Even distribution of the gas entering the chamber reduces build-up and flaking of material in the chamber that can result in short circuits.

Ion source head

Growing community of inventors

Baoshan, China

Wen-Lung Ho