Taiwan Semiconductor Manufacturing Comp. Ltd.

Other

Wen Lo

Shih-Ming Chang

Chun-Hung Liu

Chien-Chih Chen

Chien-Cheng Chen

Chia-Hua Chang

Hsin-Wei Wu

Ta-Wei Ou

Ken-Hsien Hsieh

Hua-Tai Lin

Wei-Shuo Su

A method includes generating an electron beam from a radiation source; modifying an energy distribution of the electron beam through a first shaping aperture; and exposing a substrate to portions of the electron beam passing through the first shaping aperture. The first shaping aperture comprises blocking strips with a plurality of slots therebetween, a frame surrounding the blocking strips, and a diagonal support connected to the frame and one of the blocking strips.

Semiconductor apparatus and method of operating the same

An electron beam lithography system and an electron beam lithography process are disclosed herein for improving throughput. An exemplary method for increasing throughput achieved by an electron beam lithography system includes receiving an integrated circuit (IC) design layout that includes a target pattern, wherein the electron beam lithography system implements a first exposure dose to form the target pattern on a workpiece based on the IC design layout. The method further includes inserting a dummy pattern into the IC design layout to increase a pattern density of the IC design layout to greater than or equal to a threshold pattern density, thereby generating a modified IC design layout. The electron beam lithography system implements a second exposure dose that is less than the first exposure dose to form the target pattern on the workpiece based on the modified IC design layout.

Dummy insertion for improving throughput of electron beam lithography

A method of generating a layout pattern includes determining a first energy density indirectly exposed to a first feature of one or more features of a layout pattern on an energy-sensitive material when the one or more features of the layout pattern on the energy-sensitive material are directly exposed by a charged particle beam. The method also includes adjusting a second energy density exposed the first feature when the first feature is directly exposed by the charged particle beam. A total energy density of the first feature that comprises a sum of the first energy density from the indirect exposure and the second energy density from the direct exposure is maintained at about a threshold energy level to fully expose the first feature in the energy-sensitive material.

Proximity effect correction in electron beam lithography

In one example, an apparatus includes an extreme ultraviolet illumination source and an illuminator. The extreme ultraviolet illumination source is arranged to generate a beam of extreme ultraviolet illumination to pattern a resist layer on a substrate. The illuminator is arranged to direct the beam of extreme ultraviolet illumination onto a surface of a photomask. In one example, the illuminator includes a field facet mirror and a pupil facet mirror. The field facet mirror includes a first plurality of facets arranged to split the beam of extreme ultraviolet illumination into a plurality of light channels. The pupil facet mirror includes a second plurality of facets arranged to direct the plurality of light channels onto the surface of the photomask. The distribution of the second plurality of facets is denser at a periphery of the pupil facet mirror than at a center of the pupil facet mirror.

Tunable illuminator for lithography systems

A method of operating a semiconductor apparatus includes forming a first electron beam passing through a first shaping aperture; modifying an energy distribution of the first electron beam by a second shaping aperture, such that the first electron beam has a main region and an edge region having a greater energy than the main region; and exposing a workpiece to the main region and the edge region of the first electron beam to create a pattern.

Systems and methods are disclosed herein for enhancing lithography printability, and in particular, for enhancing image contrast. An exemplary method includes receiving an integrated circuit (IC) design layout and generating an exposure map based on the IC design layout. The IC design layout includes a target pattern to be formed on a workpiece, and the exposure map includes an exposure grid divided into dark pixels and bright pixels that combine to form the target pattern. The method further includes adjusting the exposure map to increase exposure dosage at edges of the target pattern. In some implementations, the adjusting includes locating an edge portion of the target pattern in the exposure map, where the edge portion has a corresponding bright pixel, and assigning exposure energy from at least one dark pixel to the corresponding bright pixel, thereby generating a modified exposure map.

Lithography system and lithography method for improving image contrast

A vehicle deceleration communication system includes a deceleration detecting sensor mounted on a decelerating device for detecting deceleration action performed by a driver in traveling so as to send out a deceleration signal, a deceleration signal emission displaying device activated by the deceleration signal from the deceleration detecting sensor, the deceleration signal emission displaying device comprising a deceleration signal emitter mounted at a rear end of a car and a deceleration display to alert a trailing car driver to deceleration of the car, and a deceleration signal reception displaying device comprising a deceleration signal receiver mounted at a front end of the car and a receiving signal display which will flash and/or send out warning sounds to alert the trailing driver to the deceleration of the front car.

Growing community of inventors

Taipei, Taiwan

Wen Lo