Industrial Technology Research Institute

United Microelectronics Corp.

Wen-Lin Wang

Ching-Ying Huang

Ping-Chia Shih

Wen-Chen Chang

Chun-Hsing Wu

Huan-Ruei Shiu

Kan-Lin Hsueh

Fang-Hei Tsau

Wan-Chun Liao

Lung-Yu Sung

Kuei-Ya Chuang

Yi-Chun Teng

Ho-Yen Hsieh

Ming-Che Tsai

Chuang-Hsin Chueh

Ssu-Yin Liu

Po-Hsien Chen

Chih-Chia Lin

Cheng-Hong Liu

The present application discloses a semiconductor structure and a manufacturing method thereof. The semiconductor structure comprises a substrate, a gate dielectric layer, a floating gate, a first dielectric layer and a control gate. The gate dielectric layer is disposed on the substrate. The floating gate is disposed on the gate dielectric layer and has at least one tip on a top surface of the floating gate. The first dielectric layer is disposed on the floating gate. The control gate is disposed above the first dielectric layer and at least partially overlaps the floating gate.

Semiconductor structure and manufacturing method thereof

A device for generating a security key includes a substrate, semiconductor units, contact structures, and defects. The semiconductor units are disposed on the substrate. The contact structures are disposed on and connected with the semiconductor units. The defects are disposed in at least a part of the contact structures randomly. A manufacturing method of a device for generating a security key includes the following steps. First semiconductor units are formed on a substrate. First contact structures are formed on the first semiconductor units. The first contact structures are connected with the first semiconductor units, and defects are formed in at least a part of the first contact structures randomly.

Device for generating security key and manufacturing method thereof

A bipolar plate, a fuel cell, and a fuel cell stack are provided. The bipolar plate includes a first flow-field plate and a second flow-field plate. The first flow-field plate and the second flow-field plate are stacked, and the edges of the first and second flow-field plates have a continuous welding portion to seal the periphery of the bipolar plate by a welding method.

Bipolar plate, fuel cell, and fuel cell stack

A bipolar plate for a fuel cell is provided, which includes: a metal substrate having a flow field structure; a conducting adhesion layer formed on the metal substrate and having a polymeric adhesive and a plurality of conductive particles; and a pure graphite layer formed on the conducting adhesion layer and structurally corresponding to the flow field structure of the metal substrate. The graphite layer including expanded graphite powder is adhered to the metal substrate via the conducting adhesion layer, and a portion of the expanded graphite powder is embedded into the conducting adhesion layer.

Method for modifying surface of metal bipolar plate and bipolar plate for fuel cell

A method for modifying the surface of a metal bipolar plate is provided. The method includes the steps of providing a metal substrate having a conducting adhesion layer on a surface thereof, the metal substrate having a flow field structure at the surface thereof; applying expanded graphite powder onto the conducting adhesion layer; and press-fitting the expanded graphite powder and the metal substrate with a mold structurally corresponding to the flow field structure, to form a graphite layer covering the surface the metal substrate from the expanded graphite powder. A bipolar plate for a fuel cell is further provided.

A method for fabricating a bi-polar plate of a fuel cell and the bi-polar plate thereof are presented. A graphite film is formed first. Next, a polymeric material added with electrically conductive powder is coated on a surface of a metal substrate. The graphite film is disposed on the polymeric material and the polymeric material is hardened to form an adhesive layer, such that the graphite film is attached on the surface of the metal substrate.

Method for fabricating bi-polar plate of fuel cell

Method for fabricating bi-polar plate of fuel cell and bi-polar plate of fuel cell

Growing community of inventors

Kaohsiung, Taiwan

Wen-Lin Wang