Agere Systems Inc.

Agere Systems Guardian Corp.

Wen Lin

Charles Walter Pearce

Jerome Tsu-Rong Chu

John D LaBarre

Blair Miller

David L Johnson

Robert J Lavigna

George H Williams

Joseph C Veshinfsky

Raymond J Newman

Subramani Rajaram

The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the same. The semiconductor device may include a doped buried layer located over a doped substrate and a doped epitaxial layer located over the doped buried layer. The semiconductor device may further include a first doped lattice matching layer located between the substrate and the buried layer and a second doped lattice matching layer located between the doped buried layer and the doped epitaxial layer.

Semiconductor device having a doped lattice matching layer and a method of manufacture therefor

The present invention provides for a method of manufacturing a simplified high Q inductor substrate and a semiconductor device having that substrate. The method for manufacturing the simplified high Q inductor substrate preferably includes forming a base substrate over a semiconductor wafer, wherein the base substrate has a given dopant concentration and then forming an epitaxial (EPI) layer over the base substrate. The EPI layer includes epitaxially forming a first doped region in the EPI layer over the base substrate and then epitaxially forming a second doped region in the EPI layer over the first doped region. The first doped region has a dopant concentration greater than the given dopant concentration of the base substrate, and the second doped region has a dopant concentration less than the first doped region.

Simplified high Q inductor substrate

The present invention provides for a method of manufacturing a simplified high Q inductor substrate and a semiconductor device having that substrate. The method for manufacturing the simplified high Q inductor substrate preferably comprises forming a base substrate over a semiconductor wafer, wherein the base substrate has a given dopant concentration and then forming an epitaxial (EPI) layer over the base substrate. The EPI layer includes epitaxially forming a first doped region in the EPI layer over the base substrate and then epitaxially forming a second doped region in the EPI layer over the first doped region. The first doped region has a dopant concentration greater than the given dopant concentration of the base substrate, and the second doped region has a dopant concentration less than the first doped region.

A glass crucible (30) for containing a material from which a silicon crystal melt is produced, wherein the inside surface area of the crucible is increased to react with the silicon melt (31) to increase the oxygen content thereof. The inside surface area may be increased by incorporating inwardly directed silica ribs (40) or concentric, hollow silica cylinders (32) as well as forming corrugations (45) or undulations on the inside surface thereof.

Technique for increasing oxygen incorporation during silicon Czochralski

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Allentown, PA, United States of America

Wen Lin