General Electric Company

Wen Li

Yanfeng Du

John Eric Tkaczyk

Jonathan David Short

George E Possin

James Walter LeBlanc

Abdelaziz Ikhlef

Naresh Kesavan Rao

Brian David Yanoff

Jeffrey Alan Kautzer

Samit Kumar Basu

James Wilson Rose

Xiaoye Wu

Aaron Judy Couture

Deborah Joy Walter

Scott Stephen Zelakiewicz

Kent Charles Burr

Floribertus Heukensfeldt Jansen

Oliver Richard Astley

J Eric Tkaczyk

Jianguo Zhao

Kristen Ann Wangerin

Rogerio Geraldes Rodrigues

James Leblanc

Detector modules and methods of manufacturing are provided. One detector module includes a detector having a silicon wafer structure formed from a first layer having a first resistivity and a second layer having a second resistivity, wherein the first resistivity is greater than the second resistivity. The detector further includes a photosensor device provided with the first layer on a first side of the silicon wafer and one or more readout electronics provided with the second layer on a second side of the silicon wafer, with the first side being a different side than the second side.

Detector modules and methods of manufacturing

Photodiode arrays and methods of fabrication are provided. One photodiode array includes a silicon wafer having a first surface and an opposite second surface and a plurality of conductive vias through the silicon wafer. The photodiode array further includes a patterned doped epitaxial layer on the first surface, wherein the patterned doped epitaxial layer and the substrate form a plurality of diode junctions. A patterned etching defines an array of the diode junctions.

Photodiode array and methods of fabrication

An apparatus for reducing photodiode thermal gain coefficient includes a bulk semiconductor material having a light-illumination side. The bulk semiconductor material includes a minority charge carrier diffusion length property configured to substantially match a predetermined hole diffusion length value and a thickness configured to substantially match a predetermined photodiode layer thickness. The apparatus also includes a dead layer coupled to the light-illumination side of the bulk semiconductor material, the dead layer having a thickness configured to substantially match a predetermined thickness value and wherein an absolute value of a thermal coefficient of gain due to the minority carrier diffusion length property of the bulk semiconductor material is configured to substantially match an absolute value of a thermal coefficient of gain due to the thickness of the dead layer.

Apparatus for reducing photodiode thermal gain coefficient

A photodiode element includes a first layer of a first diffusion type and a second layer. The second layer defines a charge-collecting area. The charge-collecting area includes an active region of a second diffusion type and an inactive region. The active region surrounds the inactive region. The photodiode element also includes an intrinsic semiconductor layer between the first layer and the second layer.

Low capacitance photodiode element and computed tomography detector

The present disclosure relates to the correction of charge loss in a radiation detector. In one embodiment, correction factors for charge loss may be determined based on depth of interaction and lateral position within a radiation detector of a charge creating event. The correction factors may be applied to subsequently measured signals to correct for the occurrence of charge loss in the measured signals.

Charge loss correction

Apparatus for reducing photodiode thermal gain coefficient and method of making same

A CT detector includes a direct conversion material configured to generate electrical charge upon reception of x-rays, a plurality of metallized anodes configured to collect electrical charges generated in the direct conversion material, at least one readout device, and a redistribution layer having a plurality of electrical pathways configured to route the electrical charges from the plurality of metallized anodes to the at least one readout device. A plurality of switches is coupled to the plurality of electrical pathways between the plurality of metallized anodes and the at least one readout device, wherein each of the plurality of switches includes an input line electrically coupled to one of the plurality of metallized anodes, a first output node electrically coupled to the at least one readout device, and a second output node electrically coupled to at least one other switch of the plurality of switches.

Method and apparatus for flexibly binning energy discriminating data

A radiation detector includes at least one multiple channel pixelated detector driven via a plurality of pixelated anode electrodes and at least one planar cathode electrode. Each detector is configured to reduce the number of active pixelated anode electrodes until a rate of events detected via at least one corresponding planar cathode electrode exceeds a preset threshold above a background count rate within a predetermined time period.

Radiation detector power management for portable/handheld applications

A photon-counting detector includes a direct conversion material and a data acquisition system with a first comparator having a first signal level threshold indicative of a noise level of a spectrum of photons, the first comparator configured to output a count when the electrical signal level exceeds the first signal level threshold, and a second comparator having a second signal level threshold indicative of the maximum energy of the spectrum of photons, the second comparator configured to output a count when the electrical signal exceeds the second signal level threshold where a photon count is determined based on the counts from the first and second comparators.

High DQE photon counting detector using statistical recovery of pile-up events

A solid-state photomultiplier (SSPM) includes an optical isolation structure therein. The SSPM includes a substrate and an epitaxial diode layer positioned on the substrate. A plurality of avalanche photodiodes (APDs) are fabricated on the epitaxial diode layer and the optical isolation structure is positioned about the plurality of APDs to separate each of the plurality of APDs from adjacent APDs. The optical isolation structure contains at least one of a light absorbing material and a light reflecting material deposited therein to reduce optical crosstalk and dark count rate in the SSPM.

Structure of a solid state photomultiplier

A diagnostic imaging system includes an x-ray source that emits a beam of x-ray energy toward an object to be imaged and an energy discriminating (ED) detector that receives the x-ray energy emitted by the x-ray energy source. The ED detector includes a first layer having a first thickness, wherein the first layer comprises a semiconductor configurable to operate in at least an integrating mode and a second layer having a second thickness greater than the first thickness, and configured to receive x-rays that pass through the first layer. The system further includes a data acquisition system (DAS) operably connected to the ED detector and a computer that is operably connected to the DAS. The computer is programmed to identify saturated data in the second layer and substitute the saturated data with non-saturated data from a corresponding pixel in the first layer.

Method and system of energy integrating and photon counting using layered photon counting detector

A diagnostic imaging system includes a high frequency electromagnetic energy source that emits a beam of high frequency electromagnetic energy toward an object to be imaged. An energy discriminating (ED) detector receives high frequency electromagnetic energy emitted by the high frequency electromagnetic energy source. The ED detector includes a first direct conversion layer and a second direct conversion layer. The first direct conversion layer comprises a first direct conversion material and the second direct conversion layer comprises a second direct conversion material that is different from the first direct conversion material. A data acquisition system (DAS) is operably connected to the ED detector and a computer operably connected to the DAS.

Energy discriminating detector different materials direct conversion layers

Count rates may be obtained from one or more subpixels for a given pixel in an imaging system detector. Count rates may be obtained from individual subpixels, or may be from electronically binned subpixels at least in part in various subpixel arrangements where a selected subpixel arrangement may be adaptively set according to a detected count rate. For lower count rates, two or more subpixels may be electronically binned together and the counts may be obtained from the binned subpixels, for example to mitigate a charge sharing effect. For higher count rates, the count rates of a greater number of subpixels may be individually obtained, for example to mitigate a pulse pile-up effect. Detective quantum efficiency may be optimized over a wider range of photon flux rate via the adaptive subpixel arrangement.

Subpixel routing and processing for an imaging system or the like

A CT detector includes a plurality of metallized anodes with each metallized anode separated from another metallized anode by a gap. A direct conversion material is electrically coupled to the plurality of metallized anodes and has a charge sharing region in which an electrical charge generated by an x-ray impinging the direct conversion material is shared between at least two of the plurality of metallized anodes. An x-ray attenuating material is positioned to attenuate x-rays directed toward the charge sharing region.

Method and apparatus to reduce charge sharing in pixellated energy discriminating detectors

A CT detector includes a pixel having a single photodiode and multiple charge storage devices that are alternately stored and read out. The photodiode is a frontlit diode with a pair of capacitors that alternately store charge generated during data acquisition. Multiple pixels are connected to a single readout amplifier. Charge is continuously acquired from each photodiode and stored on the charge storage devices, but such readout is from a single charge storage device at a time. As such, each charge storage device is read out independently, but the charge storage devices are connected to a common readout channel or port.

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Clifton Park, NY, United States of America

Wen Li