Industrial Technology Research Institute

Wen-Kuei Huang

Cheng-Chung Lee

Jia-Chong Ho

Tarng-Shiang Hu

Liang-Ying Huang

Wei-Ling Lin

Cheng-Chung Hsieh

Yu-Yang Chang

Wei-Yi Lin

Ming-Chun Hsiao

Ying-Hsien Cheng

Yun-Chiao Hsiao

An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.

Organic thin-film transistor and method for manufacturing the same

An anode plate for a field emission display device (FED) is disclosed, which has a substrate; an anode conductive layer formed on the substrate; at least one interspacing conductive band having a plurality of internal gaps for connecting the anode conductive layer and external cable lines, wherein the interspacing conductive band covers a part of the anode conductive layer; and a fluorescent layer located on the anode conductive layer, to serve as a source of luminescence for a field emission display device. The field emission display device includes the anode plate aforesaid as is also disclosed.

Anode plate for a field emission display device

The present invention discloses a multi-passivation layer structure for organic thin-film transistors and a method for fabricating the same by spin coating, inject printing, screen printing and micro-contact on organic thin-film transistors. The multi-passivation layer structure for organic thin-film transistors, comprising: a substrate; a gate layer formed on the substrate; an insulator layer formed on the substrate and the gate layer; an electrode layer formed on the insulator layer; a semiconductor layer formed on the insulator layer and the electrode layer; and a passivation layer formed on the semiconductor layer and the electrode layer, thereby forming a multi-passivation layer structure for organic thin-film transistors.

Multi-passivation layer structure for organic thin-film transistors and method for fabricating the same

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Chiai, Taiwan

Wen-Kuei Huang