Winbond Electronics Corporation

National Science Council

Wen-Kuei Huang

Hsi-Chuan Chen

Ging-Ho Hsiue

Low leakage and low resistance plugs for a memory device and the manufacturing method for the plugs includes a doped polysilicon layer first deposited at contact nodes and bit-line contacts inside the memory to form a low leakage interface. A low contact resistance imbedded tungsten plug is subsequently deposited on the polysilicon layer to form a low contact resistance imbedded tungsten plug in concavities at the contact nodes and bit-line contacts. Excess material is etched to leave double layer plugs at the contact nodes and bit-line contacts that constitute low leakage and low contact resistance memory plugs.

Low leakage and low resistance for memory and the manufacturing method for the plugs

The present invention relates to a method of synthesizing a bigraft compolymer based on grafted type peracid polymer, which comprises graft polymerizing a first ethylenically unsaturated monomer containing a carboxyl group onto a polymer substrate having a form of a membrane, particulate or tube; oxidizing the carboxyl groups of the resulting graft polymer into peracids; and then graft polymerizing a second ethylenically unsaturated monomer onto the grafted chain of the graft polymer through the decomposition of the peracid. Surface profile and morphology of the bigraft copolymer membrane product is also investigated by scanning electron microscopy and transmission electron microscopy respectively.

Growing community of inventors

Hsinchu, Taiwan

Wen-Kuei Huang