Siliconware Precision Industries Co., Ltd.

Wen-Jung Chiang

Yu-Po Wang

Cheng-Yu Chiang

Hsin-Hung Lee

Tai-Tsung Hsu

Miao-Wen Chen

Cheng-Hsu Hsiao

Chien-Te Chen

Nai-Hao Kao

Tsung-Tien Hsieh

Sen-Yen Yang

Hsing-Hung Lee

A multi-chip package structure is provided, including a substrate having a grounding structure; two semiconductor elements disposed on and electrically connected to the substrate; an encapsulant formed on the substrate and encapsulating semiconductor elements, wherein the encapsulant has a plurality of round holes formed between the semiconductor elements; and an electromagnetic shielding structure formed in each of the round holes and connected to the grounding structure to achieve electromagnetic shielding effects. A method for forming the multi-chip package is also provided.

Method for manufacturing multi-chip package

Multi-chip package and method for manufacturing the same

A package structure is disclosed, which includes: a carrier having a recessed portion formed on a lower side thereof and filled with a dielectric material; a semiconductor element disposed on an upper side of the carrier and electrically connected to the carrier; and an encapsulant formed on the upper side of the carrier for encapsulating the semiconductor element. Therein, the dielectric material is exposed from the encapsulant. As such, when the carrier is disposed on a circuit board, the dielectric material is sandwiched between the lower side of the carrier and the circuit board to form a decoupling capacitor, thereby improving the power integrity.

Electronic device and package structure thereof

A semiconductor package substrate is provided, which includes a substrate body having a plurality of conductive through holes formed therein, wherein at least two adjacent conductive through holes are formed as a differential pair, each of which has a ball pad formed at an end thereof; and at least one electrically integrated layer formed in the substrate body, and having an opening corresponding to the two adjacent conductive through holes formed as the differential pair and the ball pads thereof. Thus, the spacing between the conductive through holes and the electrically integrated layer and the spacing between the ball pads can be enlarged by the opening, so as to balance the impedance match.

Semiconductor package substrate

A high electrical performance semiconductor package is proposed. A carrier is provided having a first surface, an opposite second surface, and conductive vias for electrically connecting the first surface to the second surface. A chip is attached to the first surface of the carrier. A plurality of via lands are disposed peripherally on the first surface of the carrier and electrically connected to the vias. A plurality of conductive regions are disposed on the second surface of the carrier and electrically connected to the vias. A plurality of fingers are disposed around the chip and electrically connected to the via lands by conductive traces formed on the first surface of the carrier. A plurality of bonding wires electrically connect the chip to the fingers. Lengths of the wires for transmitting differential pair signals are substantially equal, and lengths of the traces for transmitting the differential pair signals are substantially equal.

High electrical performance semiconductor package

A cavity-down ball grid array (CDBGA) semiconductor package with a heat spreader is provided, in which a substrate is formed with at least a ground ring, a plurality of ground vias, a ground layer, and at least an opening for receiving at least a chip. The substrate is mounted in a cavity of the heat spreader, and an electrically conductive adhesive is disposed between an inner wall of the cavity and edges of the substrate, so as to allow the ground layer and the ground ring exposed to the edges of the substrate to be electrically connected to the heat spreader by means of the electrically conductive adhesive. By the above arrangement with the heat spreader being included in a grounding circuit path of the chip, ground floatation and excess ground inductance and resistance can be prevented for the semiconductor package, thereby solving heat-dissipation, electromagnetic interference and crosstalk problems.

Growing community of inventors

Taichung, Taiwan

Wen-Jung Chiang