Taiwan Semiconductor Manufacturing Comp. Ltd.

Au Optronics Corporation

Wen-Ju Chen

Chi On Chui

Chung-Ting Ko

Tai-Chun Huang

Chun-Chang Chiu

Jia-Hung Huang

Wan-Chen Hsieh

Yung-Cheng Lu

Ting-Gang Chen

Ya-Lan Chang

Ming-Fa Wu

Chun-Ming Lung

A method includes forming a semiconductor layer over a substrate; etching a portion of the semiconductor layer to form a first recess and a second recess; forming a first masking layer over the semiconductor layer; performing a first thermal treatment on the first masking layer, the first thermal treatment densifying the first masking layer; etching the first masking layer to expose the first recess; forming a first semiconductor material in the first recess; and removing the first masking layer.

Multilayer masking layer and method of forming same

Masking layer with post treatment

In an embodiment, a method of forming a semiconductor device includes forming a hydrophobic coating on an inner surface of an exhaust line, connecting the exhaust line to a semiconductor processing chamber, introducing a first precursor into the semiconductor processing chamber, introducing a second precursor into the semiconductor processing chamber, wherein the first precursor reacts with the second precursor to form a layer of oxide material, and pumping the first precursor and the second precursor from the semiconductor processing chamber and through the exhaust line.

Atomic layer deposition tool and method

A method of manufacturing a semiconductor device includes forming a first semiconductor layer over a substrate, forming a second semiconductor layer over the first semiconductor layer, and forming a sacrificial film over the first semiconductor layer and the second semiconductor layer. The sacrificial film fills an area between the first semiconductor layer and the second semiconductor layer. The method further includes forming a space in the sacrificial film between the first semiconductor layer and the second semiconductor layer and removing the sacrificial film.

Semiconductor device and method

An active device array substrate including a substrate, a plurality of scan lines, a plurality of data lines, and a plurality of pixel units, each of the pixel units formed between every neighboring two of the scan lines and data lines is provided. Each of the pixel units includes a first active device, a first pixel electrode electrically connected to a corresponding scan line and a corresponding data line through the first active device, a second active device, a second pixel electrode electrically connected to a corresponding scan line and a corresponding data line through the first active device, a second active device and a second pixel electrode electrically connected to a corresponding scan line and a corresponding data line through the second active device. The first pixel electrode has a surface area different from that of the second pixel electrode.

Liquid crystal display panel and active device array substrate thereof

An active device array substrate, including a substrate, a plurality of scan lines, a plurality of data lines and a plurality of pixel units is provided. The scan lines, data lines and pixel units are disposed on the substrate. Each of the pixel units includes a first active device, a first pixel electrode, a first resistive device, a second active device, and a second pixel electrode. The first pixel electrode is electrically connected to a corresponding scan line and a corresponding data line through the first active device. The first resistive device is electrically connected between the first active device and the first pixel electrode. Additionally, the second pixel electrode is electrically connected to a corresponding scan line and a corresponding data line through the second active device.

Liquid crystal display panel and active device array substrate having resistive device

Growing community of inventors

Hsinchu, Taiwan

Wen-Ju Chen