Macronix International Co., Ltd.

Wen-Jer Tsai

Jyun-Siang Huang

Chih-Chieh Cheng

Shih-Guei Yan

Tao-Cheng Lu

Cheng-Hsien Cheng

Chih-Chieh Yeh

Chun-Chang Lu

Tien-Fan Ou

Wei-Liang Lin

Ping-Hung Tsai

Shaw-Hung Ku

You-Liang Chou

Ta-Wei Lin

Nian-Kai Zous

Ta-Hui Wang

Samuel C Pan

Chih-Wei Lee

Tso-Hung Fan

Atsuhiro Suzuki

Yu-Hung Huang

Lit-Ho Chong

Yao-Wen Chang

Hung-Yueh Chen

Yen-Hung Yeh

Guan-Wei Wu

Mu-Yi Liu

Chih-Yuan Lu

Tao Cheng Lu

Yi Ying Liao

Ta-wei Lin

Yi Chou Chen

Kwang-Yang Chan

Tien Fan Ou

Lan Ting Huang

Hsuan Ling Kao

Kwang Yang Chan

Yi-Ying Liao

Tso Hung Fan

Nan-Heng Lu

Sheng-Kai Chen

A semiconductor structure is provided. The semiconductor structure includes a first substrate, a device layer, a first dielectric layer, a second dielectric layer, a second substrate, and a circuit layer. The device layer is disposed on the first substrate. The first dielectric layer is disposed on the device layer. The second dielectric layer is disposed on the first dielectric layer. The second substrate is disposed on the second dielectric layer. The circuit layer is disposed on the second substrate.

Semiconductor structure and method for manufacturing the same

A memory device and a read method therefor are disclosed. The memory device includes first to third memory cell strings. The memory device is a three-dimensional NAND flash memory with high capacity and high performance. Each of the memory cell strings includes first to third memory cells. The read method includes: performing a first read operation of the memory device to the second memory cell in the second memory cell string, the first read operation includes applying a first bit line voltage to a first bit line, a second bit line, and a third bit line; in response to the failure of the first read operation, performing a second read operation of the memory device, the second read operation includes: applying a set of second bit line voltages to the first bit line, the second bit line and the third bit line.

Memory device and read method adjusting multiple bit line voltages for error mitigation reading

A memory device and a reading method thereof are provided. A second word line and a third word line are adjacent to a first word line. The reading method includes the following steps. A read procedure is executed to read a plurality of memory cells of the first word line. When a read error occurs, a re-read procedure is executed for some of the memory cells belonging to a state marginal group. The read procedure includes: applying a read voltage to the first word line; applying a first pass voltage to the second word line and the third word line. The re-read procedure includes: applying the read voltage to the first word line; applying a second pass voltage and a third pass voltage different from the first pass voltage to the second word line and the third word line respectively.

Memory device and reading method thereof

A memory device and a reading method thereof are provided. The memory device at least includes a first word line, a second word line and a third word line. The reading method includes the following steps. A read procedure is executed to read a plurality of memory cells connected to the first word line. A recognition procedure is executed in response to at least one memory cell has an error. A re-read procedure is executed on the memory cell. The recognition procedure includes: applying a pass voltage to the first word line; applying a recognition voltage to at least one of the second word line and the third word line. The re-read procedure including: applying a second read voltage to the first word line; and applying a second pass voltage to the second word line and a third pass voltage to the third word line.

A memory device is provided and includes a memory array. The memory array includes multiple strings, each of the strings including multiple memory cells and at least one compensation cell that are coupled in series to a corresponding one of multiple bit lines. In a read operation, the at least one compensation cell in each of the strings has a resistance responsive to at least one compensation voltage applied on the at least one compensation cell to adjust a read current in the corresponding bit line to a current value. The resistance is associated with a number of programmed cells in the memory cells coupled to the corresponding bit line.

Memory device and an operation method thereof

An operation method for a memory device is provided. The operation method includes: increasing a dummy word line voltage to a first dummy word line voltage during a pre-turn on period; increasing the dummy word line voltage from the first dummy word line voltage to a second dummy word line voltage during a read period; and lowering the dummy word line voltage after the read period is finished. Wherein the first dummy word line voltage is lower than the second dummy word line voltage.

Operation method for a memory device

A memory device and a method for operating selective erase scheme are provided. In an erase operation, a switch voltage is applied to at least one of a string select line or a ground select line of a selected sub-block of a selected block, a gate control voltage is applied to selected word lines of the selected sub-block, and an erase voltage is applied to bit lines and a common source line of the selected sub-block. The switch voltage is smaller than the erase voltage. The gate control voltage is smaller than the switch voltage and the erase voltage.

Memory device and method for operating selective erase scheme

A data recovery method is applied to a memory device which has a target memory cell, a target word line and an adjacent word line adjacent to the target word line. The target word line is connected to a gate of the target memory cell. The adjacent word line is connected to a gate of an adjacent memory cell, and the adjacent memory cell is adjacent to the target memory cell. In the data recovery method, a first program voltage is applied to the target memory cell through the target word line, and a second program voltage is concurrently applied to the adjacent memory cell through the adjacent word line.

Data recovery method for memory device

A memory device and a method for fabricating the memory device are provided. The memory device includes a substrate having an upper surface; a stacked structure disposed on the upper surface of the substrate, wherein the stacked structure includes a first insulating layer, a first conductive layer, a second insulating layer, a second conductive layer and a third insulating layer sequentially stacked on the substrate; a plurality of channel structures penetrating the stacked structure and electrically connected to the substrate, wherein each of the channel structures includes an upper portion corresponding to the second conductive layer and a lower portion corresponding to the first conductive layer; a memory layer disposed between the second conductive layer and the upper portion; and a plurality of isolation structures penetrating the stacked structure to separate the stacked structure into a plurality of sub-stacks.

Method for fabricating memory device

An operation method for a memory device is provided. The operation method includes: increasing a dummy word line voltage to a first dummy word line voltage during a pre-tum on period; increasing the dummy word line voltage from the first dummy word line voltage to a second dummy word line voltage during a read period; and lowering the dummy word line voltage after the read period is finished. Wherein the first dummy word line voltage is lower than the second dummy word line voltage.

Provided are a memory device and an operation method thereof. The memory device includes a plurality of word lines. The operation method comprising: performing a pre-fill operation on the word lines, in a first loop, applying a selected word line voltage on a first selected word line group and applying an unselected word line voltage on a first unselected word line group, and in a second loop, applying the selected word line voltage on a second selected word line group and applying the unselected word line voltage on a second unselected word line group, the first selected word line group being different from the second selected word line group, and the first unselected word line group being different from the second unselected word line group; performing an erase operation on the word lines; and performing a programming operation on the word lines.

Memory device and operation method thereof

A memory device includes a substrate having an upper surface; a stacked structure disposed on the upper surface of the substrate, wherein the stacked structure includes a first insulating layer, a first conductive layer, a second insulating layer; a second conductive layer and a third insulating layer sequentially stacked on the substrate; a plurality of channel structures penetrating the stacked structure and electrically connected to the substrate, wherein each of the channel structures includes an upper portion corresponding to the second conductive layer and a lower portion corresponding to the first conductive layer; a memory layer disposed between the second conductive layer and the upper portion; and a plurality of isolation structures penetrating the stacked structure to separate the stacked structure into a plurality of sub-stacks.

Memory device and method for fabricating the same

A 3D memory device includes a substrate, stacked structures formed on the substrate, common source line (CSL) contacts, and NOR flash memories. The substrate has CSLs and memory cell regions alternately arranged along one direction in parallel. The stacked structures are located on the memory cell regions and include a ground select line (GSL) layer and a word line (WL) layer. The CSL contacts are disposed along another direction to connect the CSLs. The NOR flash memories are disposed in the memory cell regions, and each of the NOR flash memories includes at least an epitaxial pillar through the stacked structure, a charge-trapping layer located between the epitaxial pillar and the WL layer, and a high-k layer located between the charge-trapping layer and the WL layer. The epitaxial pillar has a retracted sidewall at a position passing through the GSL layer.

3D memory device and method of manufacturing the same

A memory device and a programming method thereof are provided. The memory device includes a memory array, a plurality of word lines and a voltage generator. During a programming procedure, one of the word lines is at a selected state and others of the word lines are at a deselected state. Some of the word lines, which are at the deselected state, are classified into a first group and a second group. The first group and the second group are respectively located at two sides of the word line, which is at the selected state. The voltage generator provides a programming voltage to the word line, which is at the select state, during a programming duration. The voltage generator provides a first two-stage voltage waveform to the word lines in the first group and provides a second two-stage voltage waveform to the word lines in the second group.

Memory device and programming method thereof

Provided is an erase method for a multi-tier three-dimension (3D) memory including a plurality of tiers and a plurality of blocks, each of the tiers including a plurality of word lines. The erase method includes: in erasing a selected block among the plurality of blocks, in a current iteration, selecting at least one tier among the plurality of tiers to be erased by a first erase voltage; determining whether the at least one tier passes erase verification; and if the at least one tier passes erase verification, in a next iteration, inhibiting the at least tier which already passes erase verification from erase.

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Hsinchu, Taiwan

Wen-Jer Tsai