Taiwan Semiconductor Manufacturing Comp. Ltd.

Wen-Hsiang Lin

Chun-Ren Cheng

Yi-Shao Liu

Yi-Hsien Chang

Allen Timothy Chang

Ching-Ray Chen

Yeh-Tseng Li

A method of forming a semiconductor device includes depositing a light reflecting layer over a substrate. The method also includes forming a protection layer over the light reflecting layer. The method further includes forming an anti-reflective coating (ARC) layer over the protection layer. The method additionally includes forming an opening in the ARC layer, the protection layer and the light reflecting layer exposing the substrate. The method also includes removing the ARC layer in a wet solution comprising H2O2, the ARC layer being exposed to the HOat a flow rate greater than about 10 standard cubic centimeters per minute (sccm).

Method of forming a semiconductor device

A method of forming of MEMS nanostructures includes a portion of a substrate is recessed to form a plurality of mesas in the substrate. Each of the plurality of mesas has a top surface and a sidewall surface. A light reflecting layer is deposited over the substrate thereby covering the top surface and the sidewall surface of each mesa. A protection layer is formed over the light reflecting layer. An ARC layer is formed over the protection layer. An opening in a photo resist layer is formed over the ARC layer over each mesa. A portion of the ARC layer, the protection layer and the light reflecting layer are removed through the opening to expose the top surface of each mesa. The photo resist layer and the ARC layer over the top surface of each mesa are removed.

MEMS nanostructures and methods of forming the same

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Jhudong, Taiwan

Wen-Hsiang Lin