Inotera Memories, Inc.

Wen-Hsiang Chen

Cheng-Yeh Hsu

Hsin-Yu Hsiao

A method for fabricating a semiconductor device is provided. A first active region and a second active region are defined in a substrate. An electrode covering the first active region and the second active region is formed on the substrate. A first sacrificial layer is formed on the second active layer. A first work function electrode is formed on the first active layer by performing a first doping process to a portion of the electrode. The first sacrificial layer is removed. A second sacrificial layer is formed on the first active layer.

Method for fabricating semiconductor device

The invention provides a method for fabricating a memory device. At first, a substrate having a plurality of gate electrode stacks and a source/drain region is provided, and a barrier layer and a sacrificial layer are sequentially formed on the substrate and cover the gate electrode stacks. A portion of the sacrificial layer is removed to form a sacrificial plug between the gate electrode stacks, and then a filling layer is formed over the substrate. Next, the sacrificial plug is removed, and a contact hole is formed. A clean step with a solution containing ammonia is carried out. The barrier layer at the bottom of the contact hole is removed, and a metal plug is then formed in the contact hole to electrically contact with the source/drain region.

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Taoyuan, Taiwan

Wen-Hsiang Chen