Taiwan Semiconductor Manufacturing Comp. Ltd.

Genereach Biotechnology Corporation

Wen-Hao Cheng

Yen-Yu Chen

Hsuan-Chih Chu

Yi-Ming Dai

Jyun-Hong Chen

Peng-Ren Chen

Chih-Wei Lin

Chih-Chiang Tu

Chun-Chih Lin

Shih Wei Bih

Sheng-Wei Yeh

Shiang-Bau Wang

Chi-Ming Tsai

Yung-Jung Chang

Yi-An Huang

Wei-Chung Hu

Chung-Min Fu

Keith Kuang-Kuo Koai

Chue San Yoo

Ching-Yueh Chen

Yu-Nu Hsu

Ming-Ho Tsai

Chun-Chen Liu

Chien-Hui Chen

Ru-Gun Liu

Shuo-Yen Chou

Yun-Lung Tsai

Chen Su

Ching-Ko Lin

Venkata Sripathi Sasanka Pratapa

Hsiao-Fen Chang

Pei-Yu Li

Ajay Nandoriya

Eng Hock Lee

Benny Ku

Po-Hsiang Huang

Yu-Wen Liao

Chue-San Yoo

Tsiao-Chen Wu

Meng-Fu You

Pin-Hsing Chou

Yuan-Huang Lee

An optical device includes a ring resonator, a first optical waveguide with an end portion merged into a circumference of the ring resonator, and a second optical waveguide free of contact with the circumference of the ring resonator. The first optical waveguide is configured to receive photons. The second optical waveguide is configured to output photons coupled from the ring resonator.

Optical ring resonators

An optical device includes a first ring resonator positioned in a first plane, a first optical waveguide positioned in the first plane and configured to provide photons to the first ring resonator, a second ring resonator positioned in a second plane that is below the first plane, and a second optical waveguide positioned in the second plane. The second optical waveguide is configured to receive photons escaping from the second ring resonator.

Photonic circuitry having stacked optical resonators

A semiconductor device including: a first formation site and a second formation site for forming a first conductive bump and a second conductive bump; when a first environmental density corresponding to the first formation site is greater than a second environmental density corresponding to the second formation site, a cross sectional area of the second formation site is greater than a cross sectional area of the first formation site; wherein the first environmental density is determined by a number of formation sites around the first formation site in a predetermined range and the second environmental density is determined by a number of formation sites around the second formation site in the predetermined range; wherein a first area having the first environmental density forms an ellipse layout while a second area having the second environmental density forms a strip layout surrounding the ellipse layout.

Semiconductor device

Systematic fault localization systems and methods are provided which utilize computational GDS-assisted navigation to accelerate physical fault analysis to identify systematic fault locations and patterns. In some embodiments, a method includes detecting a plurality of electrical fault regions of a plurality of dies of a semiconductor wafer. Decomposed Graphic Database System (GDS) cross-layer clips are generated which are associated with the plurality of electrical fault regions. A plurality of cross-layer common patterns is identified based on the decomposed GDS cross-layer clips. Normalized differentials may be determined for each of the cross-layer common patterns, and locations of hotspots in each of the dies may be identified based on the determined normalized differentials.

Systems and methods for systematic physical failure analysis (PFA) fault localization

A resistive memory cell includes a lower electrode, a resistive transition metal oxide layer, and an upper electrode. The lower electrode includes at least one lower metallic barrier layer, a lower metal layer including a first metal having a melting point higher than 2,000 degrees Celsius, and a transition metal compound layer including an oxide or nitride of a transition metal selected from Ti, Ta, and W. The resistive transition metal oxide layer includes a conductive-filament-forming dielectric oxide of at least one transition metal and located on the transition metal compound layer. The upper electrode includes an upper metal layer including a second metal having a melting point higher than 2,000 degrees Celsius and at least one upper metallic barrier layer.

Resistive memory cell using an interfacial transition metal compound layer and method of forming the same

A thin-film deposition system includes a thin-film deposition chamber. A magnetron assembly is positioned within the thin-film deposition chamber to assist in thin-film deposition processes. A magnetic sensor apparatus is positioned adjacent to the magnetron assembly. The magnetic sensor apparatus includes a plurality of magnetic sensors that each sense the magnetic field in a particular location within the thin-film deposition chamber. The control system generates a magnetic field distribution based on the sensor signals from the magnetic sensors. An analysis model that has been trained with a machine learning process analyzes the magnetic field distribution and determines whether or not an abnormal magnetic field distributions process. The control system can stop the thin-film deposition process based on the output of the analysis model.

System and method for measuring magnetic fields in PVD system

The present disclosure provides a multifunction chamber having a multifunctional shutter disk. The shutter disk includes a lamp device, a DC/RF power device, and a gas line on one surface of the shutter disk. With this configuration, simplifying the chamber type is possible as the various specific, dedicated chambers such as a degas chamber, a pre-clean chamber, a CVD/PVD chamber are not required. By using the multifunctional shutter disk, the degassing function and the pre-cleaning function are provided within a single chamber. Accordingly, a separate degas chamber and a pre-clean chamber are no longer required and the overall transfer time between chambers is reduced or eliminated.

Multi-functional shutter disk for thin film deposition chamber

A method includes supporting a workpiece on a workpiece holder within a material deposition chamber. The method includes rotating the workpiece holder, tilting the workpiece holder in response to an output of a determination circuit, and controlling a temperature of the workpiece utilizing a heater on a surface of the workpiece holder. The method includes depositing a material on the workpiece. The heater includes first/second/third heating coils. The first heating coil has first/second ends and the first heating coil continuously extends between the first end and the second end. The second heating coil extends between the first/second ends of the first heating coil. The third heating coil extends between the first/second ends of the first heating coil. By using the tunable heating feature and the tilting feature of the workpiece pedestal, the present disclosure can reduce or eliminate the shadowing effect problem of the related workpiece pedestal in the art.

Method for depositing target material in deposition chamber with tiltable workpiece holder

A deposition system is provided capable of cleaning itself by removing a target material deposited on a surface of a collimator. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, a target enclosing the substrate process chamber, and a collimator having a plurality of hollow structures disposed between the target and the substrate, a vibration generating unit, and cleaning gas outlet.

Deposition system and method

A device for removing particles in a gas stream includes a first cylindrical portion configured to receive the gas stream containing a target gas and the particles, a rotatable device disposed within the first cylindrical portion and configured to generate a centrifugal force when in a rotational action to divert the particles away from the rotatable device, a second cylindrical portion coupled to the first cylindrical portion and configured to receive the target gas, and a third cylindrical portion coupled to the first cylindrical portion and surrounding the second cylindrical portion, the third cylindrical portion being configured to receive the diverted particles.

Particle remover and method

A deposition system is provided capable of measuring at least one of the film characteristics (e.g., thickness, resistance, and composition) in the deposition system. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition system in accordance with the present disclosure includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, and a target enclosing the substrate process chamber. A shutter disk including an in-situ measuring device is provided.

A deposition system provides a feature that may reduce costs of the sputtering process by increasing a target change interval. The deposition system provides an array of magnet members which generate a magnetic field and redirect the magnetic field based on target thickness measurement data. To adjust or redirect the magnetic field, at least one of the magnet members in the array tilts to focus on an area of the target where more target material remains than other areas. As a result, more ion, e.g., argon ion bombardment occurs on the area, creating more uniform erosion on the target surface.

An EUV reflective structure includes a substrate and multiple pairs of a Si layer and a Mo layer. The Si layer includes a plurality of cavities.

Extreme ultraviolet light reflective structure including nano-lattice and manufacturing method thereof

A sputtering target structure includes a back plate characterized by a first size, and a plurality of sub-targets bonded to the back plate. Each of the sub-targets is characterized by a size that is a fraction of the first size and is equal to or less than a threshold target size. Each sub-target includes a ferromagnetic material containing iron (Fe) and boron (B). Each of the plurality of sub-targets is in direct contact with one or more adjacent sub-targets.

Target for MRAM

A lithography exposure system includes a light source, a substrate stage, and a mask stage between the light source and the substrate stage along an optical path from the light source to the substrate stage. The lithography exposure system further comprises a reflector along the optical path. The reflector comprises: a first layer having a first material and a first thickness; a second layer having the first material and a second thickness different from the first thickness; and a third layer between the first layer and the second layer, and having a second material different from the first material.

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Hsinchu, Taiwan

Wen-Hao Cheng